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经非热常压氮气等离子体处理的钛植入物的骨整合特性。

Osseointegration Properties of Titanium Implants Treated by Nonthermal Atmospheric-Pressure Nitrogen Plasma.

机构信息

Department of Removable Prosthodontics and Occlusion, Osaka Dental University, 8-1, Kuzuhahanazono-cho, Hirakata-shi, Osaka 573-1121, Japan.

Ceramic Physics Laboratory, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, Kyoto 606-8126, Japan.

出版信息

Int J Mol Sci. 2022 Dec 6;23(23):15420. doi: 10.3390/ijms232315420.

DOI:10.3390/ijms232315420
PMID:36499747
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9740438/
Abstract

Pure titanium is used in dental implants owing to its excellent biocompatibility and physical properties. However, the aging of the material during storage is detrimental to the long-term stability of the implant after implantation. Therefore, in this study, we attempted to improve the surface properties and circumvent the negative effects of material aging on titanium implants by using a portable handheld nonthermal plasma device capable of piezoelectric direct discharge to treat pure titanium discs with nitrogen gas. We evaluated the osteogenic properties of the treated samples by surface morphology and elemental analyses, as well as in vitro and in vivo experiments. The results showed that nonthermal atmospheric-pressure nitrogen plasma can improve the hydrophilicity of pure titanium without damaging its surface morphology while introducing nitrogen-containing functional groups, thereby promoting cell attachment, proliferation, and osseointegration to some extent. Therefore, nitrogen plasma treatment may be a promising method for the rapid surface treatment of titanium implants.

摘要

纯钛由于其优异的生物相容性和物理性能,被用于牙科植入物。然而,材料在储存过程中的老化会对植入后的植入物的长期稳定性产生不利影响。因此,在这项研究中,我们尝试使用一种能够进行压电直接放电的便携式手持非热等离子体设备,用氮气处理纯钛盘,从而改善材料的表面性能,并规避材料老化对钛植入物的负面影响。我们通过表面形貌和元素分析以及体外和体内实验来评估处理样品的成骨性能。结果表明,非热大气压氮气等离子体可以在不破坏其表面形貌的情况下提高纯钛的亲水性,同时引入含氮官能团,从而在一定程度上促进细胞附着、增殖和骨整合。因此,氮气等离子体处理可能是一种有前途的钛植入物快速表面处理方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b28/9740438/26cfe7c21d6a/ijms-23-15420-g007.jpg
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