铌（V）掺杂纳米晶β-氧化镓的电学和气体传感特性

Electrical and Gas Sensor Properties of Nb(V) Doped Nanocrystalline β-GaO.

作者信息

Andreev Matvei, Topchiy Maxim, Asachenko Andrey, Beltiukov Artemii, Amelichev Vladimir, Sagitova Alina, Maksimov Sergey, Smirnov Andrei, Rumyantseva Marina, Krivetskiy Valeriy

机构信息

Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119234 Moscow, Russia.

A.V. Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, Leninsky Prospect 29, 119991 Moscow, Russia.

出版信息

Materials (Basel). 2022 Dec 13;15(24):8916. doi: 10.3390/ma15248916.

DOI:10.3390/ma15248916

PMID:36556720

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9781856/

Abstract

A flame spray pyrolysis (FSP) technique was applied to obtain pure and Nb(V)-doped nanocrystalline β-GaO, which were further studied as gas sensor materials. The obtained samples were characterized with XRD, XPS, TEM, Raman spectroscopy and BET method. Formation of GaNbO phase is observed at high annealing temperatures. Transition of Ga(III) into Ga(I) state during Nb(V) doping prevents donor charge carriers generation and hinders considerable improvement of electrical and gas sensor properties of β-GaO. Superior gas sensor performance of obtained ultrafine materials at lower operating temperatures compared to previously reported thin film GaO materials is shown.

摘要

采用火焰喷雾热解（FSP）技术制备了纯的和掺Nb（V）的纳米晶β-GaO，并将其作为气体传感器材料进行了进一步研究。通过X射线衍射（XRD）、X射线光电子能谱（XPS）、透射电子显微镜（TEM）、拉曼光谱和BET法对所得样品进行了表征。在高退火温度下观察到GaNbO相的形成。Nb（V）掺杂过程中Ga（III）向Ga（I）态的转变阻止了施主电荷载流子的产生，并阻碍了β-GaO电学和气体传感性能的显著改善。结果表明，与先前报道的薄膜GaO材料相比，所得超细材料在较低工作温度下具有优异的气体传感性能。