Controlled Crystallinity of a Sn-Doped α-GaO Epilayer Using Rapidly Annealed Double Buffer Layers.

Double buffer layers composed of (AlGa)O/GaO structures were employed to grow a Sn-doped α-GaO epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the crystal quality of the upper-grown Sn-doped α-GaO thin films by blocking dislocation generated by the substrates. Rapid thermal annealing was conducted for the double buffer layers at phase transition temperatures of 700-800 °C. The slight mixing of κ and β phases further improved the crystallinity of the grown Sn-GaO thin film through local lateral overgrowth. The electron mobility of the Sn-GaO thin films was also significantly improved due to the smoothened interface and the diffusion of Al. Therefore, rapid thermal annealing with the double buffer layer proved advantageous in achieving strong electrical properties for GaO semiconductor devices within a shorter processing time.