Jaafar Ayoub H, Meng Lingcong, Zhang Tongjun, Guo Dongkai, Newbrook Daniel, Zhang Wenjian, Reid Gillian, de Groot C H, Bartlett Philip N, Huang Ruomeng
School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, United Kingdom.
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom.
ACS Appl Nano Mater. 2022 Dec 23;5(12):17711-17720. doi: 10.1021/acsanm.2c03639. Epub 2022 Nov 25.
We report on the development of hybrid organic-inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics.
我们报道了通过快速简单的电化学制造方法制备的基于有机-无机杂化材料的柔性忆阻器器件的进展。这些器件由聚甲基丙烯酸甲酯（PMMA）和富碲的GeSbTe硫族化物纳米级薄膜双层组成，夹在硅和柔性聚酰亚胺基板上的银顶电极和氮化钛底电极之间。这些混合忆阻器无需电形成过程，并且在平坦和弯曲条件下的低开关电压下均表现出可靠且可重复的双极电阻开关。通过控制顺从电流（CC）也可以实现多态开关行为。我们将器件中高电阻状态（HRS）和低电阻状态（LRS）之间的切换归因于混合PMMA/GeSbTe基质内导电银细丝的形成和断裂。这项工作为通过电沉积工艺制造柔性存储器件以应用于柔性电子学提供了一条有前景的途径。
