Ho Tsz-Lung, Ding Keda, Lyapunov Nikolay, Suen Chun-Hung, Wong Lok-Wing, Zhao Jiong, Yang Ming, Zhou Xiaoyuan, Dai Ji-Yan
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
College of Physics, Chongqing University, Chongqing 401331, China.
Nanomaterials (Basel). 2022 Jun 21;12(13):2128. doi: 10.3390/nano12132128.
Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO(STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device.
忆阻器件中的多级电阻开关对于非易失性存储器和神经形态计算应用至关重要。在本研究中，我们报告了基于SnSe/SrTiO（STO）异质结的具有银（Ag）和铜（Cu）顶电极的存储器件中的多级电阻开关特性。基于SnSe/STO的存储器件呈现出双极电阻开关（RS），开/关比为两个数量级，可靠且稳定。此外，通过在有电流限制的情况下扫描电压将器件从高电阻状态（HRS）设置为低电阻状态（LRS），并通过无限制电流的电压脉冲将器件从LRS重置为HRS，在器件中实现了多级状态切换。分别使用Ag和Cu顶电极，在具有Pt底电极的SnSe/SrTiO异质结构中展示了八级和六级电阻开关。这些结果表明，基于SnSe/STO异质结的忆阻器作为突触器件在神经形态计算应用中具有前景。
