Batool Saima, Idrees Muhammad, Han Su-Ting, Roy Vellaisamy A L, Zhou Ye
Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
Additive Manufacturing Institute, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Small. 2023 Mar;19(12):e2206550. doi: 10.1002/smll.202206550. Epub 2023 Jan 1.
Current electrical contact models are occasionally insufficient at the nanoscale owing to the wide variations in outcomes between 2D mono and multi-layered and bulk materials that result from their distinctive electrostatics and geometries. Contrarily, devices based on 2D semiconductors present a significant challenge due to the requirement for electrical contact with resistances close to the quantum limit. The next generation of low-power devices is already hindered by the lack of high-quality and low-contact-resistance contacts on 2D materials. The physics and materials science of electrical contact resistance in 2D materials-based nanoelectronics, interface configurations, charge injection mechanisms, and numerical modeling of electrical contacts, as well as the most pressing issues that need to be resolved in the field of research and development, will all be covered in this review.
由于二维单层、多层和块状材料因其独特的静电学和几何结构而导致的结果差异很大，当前的电接触模型在纳米尺度上偶尔会显得不足。相反，基于二维半导体的器件带来了重大挑战，因为需要与接近量子极限的电阻进行电接触。二维材料上缺乏高质量、低接触电阻的接触，已经阻碍了下一代低功耗器件的发展。本文将综述二维材料基纳米电子学中电接触电阻的物理和材料科学、界面配置、电荷注入机制以及电接触的数值建模，以及研发领域中最紧迫需要解决的问题。
