Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
J Synchrotron Radiat. 2023 Jan 1;30(Pt 1):84-89. doi: 10.1107/S1600577522011122.
Crystal monochromators are indispensable optical components for the majority of beamlines at synchrotron radiation facilities. Channel-cut monochromators are sometimes chosen to filter monochromatic X-ray beams by virtue of their ultrahigh angular stability. Nevertheless, high-accuracy polishing on the inner diffracting surfaces remains challenging, thus hampering their performance in preserving the coherence or wavefront of the photon beam. Herein, a magnetically controlled chemical-mechanical polishing (MC-CMP) approach has been successfully developed for fine polishing of the inner surfaces of channel-cut crystals. This MC-CMP process relieves the constraints of narrow working space dictated by small offset requirements and achieves near-perfect polishing on the surface of the crystals. Using this method, a high-quality surface with roughness of 0.614 nm (root mean square, r.m.s.) is obtained in a channel-cut crystal with 7 mm gap designed for beamlines at the High Energy Photon Source, a fourth-generation synchrotron radiation source under construction. On-line X-ray topography and rocking-curve measurements indicate that the stress residual layer on the crystal surface was removed. Firstly, the measured rocking-curve width is in good agreement with the theoretical value. Secondly, the peak reflectivity is very close to theoretical values. Thirdly, topographic images of the optics after polishing were uniform without any speckle or scratches. Only a nearly 2.5 nm-thick SiO layer was observed on the perfect crystalline matrix from high-resolution transmission electron microscopy photographs, indicating that the structure of the bulk material is defect- and dislocation-free. Future development of MC-CMP is promising for fabricating wavefront-preserving and ultra-stable channel-cut monochromators, which are crucial to exploit the merits of fourth-generation synchrotron radiation sources or hard X-ray free-electron lasers.
晶体单色器是同步辐射设施中大多数光束线不可或缺的光学元件。由于具有超高的角稳定性,有时会选择通道刻蚀单色器来过滤单色 X 射线束。然而,在内衍射表面上进行高精度抛光仍然具有挑战性,从而影响了其在保持光子束相干性或波前方面的性能。在此,我们成功地开发了一种用于通道刻蚀晶体的内表面精密抛光的磁控化学机械抛光(MC-CMP)方法。该 MC-CMP 工艺缓解了由小偏移要求决定的狭窄工作空间的限制,并实现了晶体表面的近乎完美抛光。使用这种方法,在为在建的第四代同步辐射光源——高能光子源的光束线设计的具有 7mm 间隙的通道刻蚀晶体中,获得了粗糙度为 0.614nm(均方根,r.m.s.)的高质量表面。在线 X 射线形貌和摇摆曲线测量表明,晶体表面的应力残留层已被去除。首先,测量的摇摆曲线宽度与理论值吻合良好。其次,峰值反射率非常接近理论值。第三,抛光后光学器件的形貌图像均匀,没有任何斑点或划痕。仅从高分辨率透射电子显微镜照片中观察到在完美的晶态基质上存在约 2.5nm 厚的 SiO 层,表明块状材料的结构无缺陷且无位错。MC-CMP 的未来发展有望用于制造保持波前和超高稳定性的通道刻蚀单色器,这对于利用第四代同步辐射光源或硬 X 射线自由电子激光的优势至关重要。