Near-infrared polarization-sensitive photodetection interfacial symmetry engineering of an Si/MAPbI heterostructural single crystal.

Methylammonium lead iodide (MAPbI) single crystals (SCs) have drawn particular attention in the optoelectronics field, due to their outstanding photoelectric performance. However, the structures of those MAPbI SCs are isotropic, which limits the further application of the materials for polarization-sensitive photodetection. Here, we propose a strategy of symmetry modulation by heterogeneously integrating large-sized MAPbI SCs with silicon (Si) wafers and we give the first demonstration of self-powered near-infrared (NIR) polarization-sensitive photodetection using MAPbI SCs. Created a delicate solution method, the MAPbI/Si heterostructures show a high crystalline quality and a solid interfacial connection. More importantly, the built-in electric field resulting from the band bending at the MAPbI/Si heterostructure interface generates polar symmetry, which enables directional transport of photogenerated carriers, making the MAPbI/Si heterostructures highly polarization-sensitive. Consequently, in the self-powered mode, NIR photodetectors of MAPbI/Si heterostructures exhibit large polarization ratios of 3.3 at 785 nm and 2.8 at 940 nm. Moreover, a high detectivity of 7.35 × 10 Jones of the present devices is also achieved. Our work gives the first demonstration of self-powered polarization-sensitive photodetection of MAPbI SCs and provides a strategy to design polarization-sensitive materials beyond the conventional limitations induced by isotropic structures.