Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
Nanotechnology. 2023 Feb 9;34(16). doi: 10.1088/1361-6528/acb35a.
Synaptic devices that emulate synchronized memory and processing are considered the core components of neuromorphic computing systems for the low-power implementation of artificial intelligence. In this regard, electrolyte-gated transistors (EGTs) have gained much scientific attention, having a similar working mechanism as the biological synapses. Moreover, compared to a traditional solid-state gate dielectric, the liquid dielectric has the key advantage of inducing extremely large modulation of carrier density while overcoming the problem of electric pinholes, that typically occurs when using large-area films gated through ultra-thin solid dielectrics. Herein we demonstrate a three-terminal synaptic transistor based on ruthenium-doped cobalt ferrite (CRFO) thin films by electrolyte gating. In the CRFO-based EGT, we have obtained multilevel non-volatile conductance states for analog computing and high-density storage. Furthermore, the proposed synaptic transistor exhibited essential synaptic behavior, including spike amplitude-dependent plasticity, spike duration-dependent plasticity, long-term potentiation, and long-term depression successfully by applying electrical pulses. This study can motivate the development of advanced neuromorphic devices that leverage simultaneous modulation of electrical and magnetic properties in the same device and show a new direction to synaptic electronics.
模拟同步记忆和处理的突触器件被认为是用于人工智能低功耗实现的神经形态计算系统的核心组件。在这方面，电解质门控晶体管（EGTs）引起了广泛的关注，其工作机制与生物突触类似。此外，与传统的固态栅介质相比，液体电介质具有在克服使用大面积栅极通过超薄固态电介质的电穿孔问题的同时，引起载流子密度极大调制的关键优势。在这里，我们通过电解质门控展示了一种基于钌掺杂钴铁氧体（CRFO）薄膜的三端突触晶体管。在基于 CRFO 的 EGT 中，我们获得了用于模拟计算和高密度存储的多级非易失性电导状态。此外，通过施加电脉冲，所提出的突触晶体管成功地表现出了基本的突触行为，包括尖峰幅度依赖性可塑性、尖峰持续时间依赖性可塑性、长时程增强和长时程抑制。这项研究可以激励开发先进的神经形态器件，这些器件可以在同一器件中同时调制电和磁性能，并为突触电子学开辟新的方向。
