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基于原子力显微镜和电子背散射衍射联用的小面类型测定

Facet type determination based on combined atomic force microscopy and electron backscatter diffraction.

作者信息

Brüning Ralf, Hajati Mehrad, Lelièvre Peter G, Bernhard Tobias, Dieter Sascha, Dietrich Grégoire

机构信息

Physics Department, Mount Allison University, Sackville, New Brunswick, Canada.

Department of Mathematics and Computer Science, Mount Allison University, Sackville, New Brunswick, Canada.

出版信息

J Microsc. 2023 Apr;290(1):10-22. doi: 10.1111/jmi.13171. Epub 2023 Jan 30.

Abstract

The distribution of facet types affects the functionality of the surfaces of polycrystalline films. However, we are not aware of a previously published convenient method to determine their distribution. This work describes and demonstrates a process to determine and map the Miller indexes (hkl) of crystal facets exposed at the surfaces of polycrystalline films. To find facet types in non-trivial cases, one must know the orientation of the crystal and the direction in which the facet is facing. The method presented here combines the crystal orientations obtained with electron backscatter diffraction with the topography of the same sample area measured with atomic force microscopy. A challenging step is to transfer the data from the two instruments into a common coordinate system. The sequence of steps in the data processing is presented, with methods to verify the results. The process is illustrated with the analysis of an etched copper clad laminate (CCL) and an electroless Cu film deposited on the CCL. This example relates to facet selection in electroless and galvanic plating processes in printed circuit board production, where an uncontrolled transition from epitaxial to non-epitaxial growth can lead to surfaces with unacceptable roughness.

摘要

小面类型的分布会影响多晶薄膜表面的功能。然而,我们并不知晓此前有已发表的便捷方法来确定其分布。本文描述并演示了一种用于确定和绘制多晶薄膜表面所暴露晶体小面的米勒指数(hkl)的过程。要在非平凡情况下找到小面类型,必须知道晶体的取向以及小面所朝向的方向。此处介绍的方法将通过电子背散射衍射获得的晶体取向与用原子力显微镜测量的同一样品区域的形貌相结合。一个具有挑战性的步骤是将来自这两种仪器的数据转换到一个公共坐标系中。文中给出了数据处理的步骤顺序以及验证结果的方法。通过对蚀刻覆铜层压板(CCL)和沉积在CCL上的化学镀铜膜的分析来说明该过程。这个例子涉及印刷电路板生产中化学镀和电镀工艺中的小面选择,其中从外延生长到非外延生长的不受控转变会导致表面粗糙度不可接受。

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