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具有高指数晶面的大单晶铜箔的晶种生长。

Seeded growth of large single-crystal copper foils with high-index facets.

机构信息

State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.

International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China.

出版信息

Nature. 2020 May;581(7809):406-410. doi: 10.1038/s41586-020-2298-5. Epub 2020 May 27.

Abstract

The production of large single-crystal metal foils with various facet indices has long been a pursuit in materials science owing to their potential applications in crystal epitaxy, catalysis, electronics and thermal engineering. For a given metal, there are only three sets of low-index facets ({100}, {110} and {111}). In comparison, high-index facets are in principle infinite and could afford richer surface structures and properties. However, the controlled preparation of single-crystal foils with high-index facets is challenging, because they are neither thermodynamically nor kinetically favourable compared to low-index facets. Here we report a seeded growth technique for building a library of single-crystal copper foils with sizes of about 30 × 20 square centimetres and more than 30 kinds of facet. A mild pre-oxidation of polycrystalline copper foils, followed by annealing in a reducing atmosphere, leads to the growth of high-index copper facets that cover almost the entire foil and have the potential of growing to lengths of several metres. The creation of oxide surface layers on our foils means that surface energy minimization is not a key determinant of facet selection for growth, as is usually the case. Instead, facet selection is dictated randomly by the facet of the largest grain (irrespective of its surface energy), which consumes smaller grains and eliminates grain boundaries. Our high-index foils can be used as seeds for the growth of other Cu foils along either the in-plane or the out-of-plane direction. We show that this technique is also applicable to the growth of high-index single-crystal nickel foils, and we explore the possibility of using our high-index copper foils as substrates for the epitaxial growth of two-dimensional materials. Other applications are expected in selective catalysis, low-impedance electrical conduction and heat dissipation.

摘要

长期以来,由于具有晶体外延、催化、电子和热工程等潜在应用,制备具有各种晶面指数的大单晶金属箔一直是材料科学的追求。对于给定的金属,只有三组低指数晶面({100}、{110}和{111})。相比之下,高指数晶面在原则上是无限的,可以提供更丰富的表面结构和性质。然而,由于与低指数晶面相比,它们在热力学和动力学上都不占优势,因此控制制备具有高指数晶面的单晶箔是具有挑战性的。在这里,我们报告了一种用于构建单晶铜箔库的种晶生长技术,这些铜箔的尺寸约为 30×20 平方厘米,具有 30 多种晶面。多晶铜箔经过轻微预氧化,然后在还原气氛中退火,导致高指数铜晶面的生长,这些晶面几乎覆盖整个箔片,并有可能生长到数米长。我们的箔片上氧化物表面层的形成意味着表面能最小化不是晶面选择的关键决定因素,这与通常情况不同。相反,晶面选择是由最大晶粒的晶面随机决定的(不考虑其表面能),最大晶粒消耗较小的晶粒并消除晶界。我们的高指数箔片可用作其他 Cu 箔片在平面内或平面外方向生长的晶种。我们表明,该技术也适用于高指数单晶镍箔的生长,并探索了将我们的高指数铜箔片用作二维材料外延生长的衬底的可能性。预计还将有其他应用,如选择性催化、低阻抗电传导和散热。

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