ADVACAM, U Pergamenky 12, 170 00 Prague 7, Czech Republic; University of Bucharest, Bucharest, Romania.
ADVACAM, U Pergamenky 12, 170 00 Prague 7, Czech Republic.
Phys Med. 2023 Feb;106:102529. doi: 10.1016/j.ejmp.2023.102529. Epub 2023 Jan 17.
Stray radiation produced by ultra-high dose-rates (UHDR) proton pencil beams is characterized using ASIC-chip semiconductor pixel detectors. A proton pencil beam with an energy of 220 MeV was utilized to deliver dose rates (DR) ranging from conventional radiotherapy DRs up to 270 Gy/s. A MiniPIX Timepix3 detector equipped with a silicon sensor and integrated readout electronics was used. The chip-sensor assembly and chipboard on water-equivalent backing were detached and immersed in the water-phantom. The deposited energy, particle flux, DR, and the linear energy transfer (LET(Si)) spectra were measured in the silicon sensor at different positions both laterally, at different depths, and behind the Bragg peak. At low-intensity beams, the detector is operated in the event-by-event data-driven mode for high-resolution spectral tracking of individual particles. This technique provides precise energy loss response and LET(Si) spectra with radiation field composition resolving power. At higher beam intensities a rescaling of LET(Si) can be performed as the distribution of the LET(Si) spectra exhibits the same characteristics regardless of the delivered DR. The integrated deposited energy and the absorbed dose can be thus measured in a wide range. A linear response of measured absorbed dose was obtained by gradually increasing the delivered DR to reach UHDR beams. Particle tracking of scattered radiation in data-driven mode could be performed at DRs up to 0.27 Gy/s. In integrated mode, the saturation limits were not reached at the measured out-of-field locations up to the delivered DR of over 270 Gy/s. A good agreement was found between measured and simulated absorbed doses.
利用专用集成电路(ASIC)芯片半导体像素探测器来描述超高剂量率(UHDR)质子束流产生的散射辐射。利用能量为 220 MeV 的质子束流,实现了从常规放射治疗剂量率到 270 Gy/s 的剂量率(DR)。使用了配备硅传感器和集成读出电子设备的 MiniPIX Timepix3 探测器。将带有硅传感器的芯片-传感器组件和电路板从水等效背板上拆下来并浸入水中。在不同位置,包括侧向、不同深度以及布拉格峰后面,在硅传感器中测量沉积能量、粒子通量、DR 和线性能量传递(LET(Si))谱。在低强度束流下,探测器以事件驱动的数据驱动模式运行,以对单个粒子进行高分辨率的光谱跟踪。这种技术提供了精确的能量损失响应和 LET(Si)谱,具有解析辐射场成分的分辨率。在更高的束流强度下,可以对 LET(Si)进行重新缩放,因为 LET(Si)谱的分布具有相同的特征,与所传递的 DR 无关。因此,可以在很宽的范围内测量积分沉积能量和吸收剂量。通过逐渐增加传递的 DR 来达到 UHDR 束流,可以获得测量吸收剂量的线性响应。在数据驱动模式下,可以对散射辐射进行粒子跟踪,达到 0.27 Gy/s 的 DR。在集成模式下,在测量的场外位置,甚至在传递的 DR 超过 270 Gy/s 的情况下,都没有达到饱和极限。测量的吸收剂量与模拟吸收剂量之间存在良好的一致性。