Li Jingyu, Zhang Heng, Ding Yi, Li Jiayi, Wang Shuiyuan, Zhang David Wei, Zhou Peng
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
Sci Bull (Beijing). 2019 Oct 30;64(20):1518-1524. doi: 10.1016/j.scib.2019.08.012. Epub 2019 Aug 13.
The emergence of two-dimensional (2D) materials has inspired academia in microelectronics to find a novel device structure to offer a potential technological route for increasing energy efficiency and processing speed for data storage and computing at transistor level. Devices based on 2D materials include logic gates and memories, each with their own unique features. However, integrating logic function and memory into a single device has barely been studied. Here, we report a non-volatile AND gate based on AlO/HfO/AlO charge-trap stack. The device can store charges after completing logic operation. The ratio of high and low current states during logic operations can exceed 10. The output current states during the logic and memory operations still have a two orders of magnitude distinction after 800 s, indicating that this device possesses the non-volatile characteristic. The device has potential applications for in-situ memory applications, which makes it a possible candidate to break the "memory wall" at transistor level.
二维（2D）材料的出现激发了微电子学领域的学术界去寻找一种新颖的器件结构，以便为在晶体管层面提高数据存储和计算的能源效率及处理速度提供一条潜在的技术途径。基于二维材料的器件包括逻辑门和存储器，它们各自具有独特的特性。然而，将逻辑功能和存储器集成到单个器件中的研究却很少。在此，我们报道了一种基于AlO/HfO/AlO电荷俘获堆栈的非易失性与门。该器件在完成逻辑操作后能够存储电荷。逻辑操作期间高电流状态与低电流状态的比率可超过10。在800秒后，逻辑操作和存储操作期间的输出电流状态仍有两个数量级的差异，这表明该器件具有非易失性特征。该器件在原位存储应用方面具有潜在应用，这使其有可能成为在晶体管层面突破“存储墙”的候选者。
