Li Yuan, Zhang Zhi Cheng, Li Jiaqiang, Chen Xu-Dong, Kong Ya, Wang Fu-Dong, Zhang Guo-Xin, Lu Tong-Bu, Zhang Jin
MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China.
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
Nat Commun. 2022 Aug 6;13(1):4591. doi: 10.1038/s41467-022-32380-3.
The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it still suffers a high operation voltage (tens of volts) due to the Fowler-Nordheim tunnelling mechanism. It is still a great challenge to realize ultrafast nonvolatile storage with low operation voltage. Here we propose a floating-gate memory with a structure of MoS/hBN/MoS/graphdiyne oxide/WSe, in which a threshold switching layer, graphdiyne oxide, instead of a dielectric blocking layer in conventional floating-gate memories, is used to connect the floating gate and control gate. The volatile threshold switching characteristic of graphdiyne oxide allows the direct charge injection from control gate to floating gate by applying a nanosecond voltage pulse (20 ns) with low magnitude (2 V), and restricts the injected charges in floating gate for a long-term retention (10 years) after the pulse. The high operation speed and low voltage endow the device with an ultralow energy consumption of 10 fJ. These results demonstrate a new strategy to develop next-generation high-speed low-energy nonvolatile memory.
对海量数据处理和存储的需求激增，这需要具备超高速、超长保留时间、超高容量和超低能耗的革命性存储技术。尽管最近超快浮栅存储器已取得突破，但由于福勒-诺德海姆隧穿机制，它仍存在较高的工作电压（数十伏）。实现低工作电压的超快非易失性存储仍然是一个巨大的挑战。在此，我们提出一种具有MoS/hBN/MoS/氧化石墨二炔/WSe结构的浮栅存储器，其中用氧化石墨二炔这种阈值开关层代替传统浮栅存储器中的介质阻挡层来连接浮栅和控制栅。氧化石墨二炔的挥发性阈值开关特性使得通过施加低幅值（2V）的纳秒电压脉冲（20 ns）可直接从控制栅向浮栅注入电荷，并在脉冲后将注入电荷限制在浮栅中实现长期保留（10年）。高运行速度和低电压赋予该器件10 fJ的超低能耗。这些结果展示了一种开发下一代高速低能耗非易失性存储器的新策略。
