Qu Yuanhang, Luo Tiancheng, Wen Zhiwei, Wei Min, Gu Xiyu, Chen Xiang, Zou Yang, Cai Yao, Liu Yan, Sun Chengliang
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
Key Laboratory of Artificial Micro, and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China.
Micromachines (Basel). 2023 Jan 7;14(1):157. doi: 10.3390/mi14010157.
The arrival of the 5G era has promoted the need for filters of different bandwidths. Thin-film bulk acoustic resonators have become the mainstream product for applications due to their excellent performance. The of the FBAR greatly influences the bandwidth of the filter. In this paper, we designed an AlN-based adjustable FBAR by designing parallel capacitors around the active area of the resonator. The parallel capacitance is introduced through the support column structure, which is compatible with conventional FBAR processes. The effects of different support column widths on were verified by finite element simulation and experimental fabrication. The measured results show that the designed FBAR with support columns can achieve a value that is 25.9% adjustable.
5G时代的到来推动了对不同带宽滤波器的需求。薄膜体声波谐振器因其优异的性能已成为应用的主流产品。薄膜体声波谐振器的[此处原文缺失关键信息]对滤波器的带宽有很大影响。在本文中，我们通过在谐振器的有源区周围设计并联电容器，设计了一种基于氮化铝的可调薄膜体声波谐振器。并联电容通过支撑柱结构引入，该结构与传统的薄膜体声波谐振器工艺兼容。通过有限元模拟和实验制作验证了不同支撑柱宽度对[此处原文缺失关键信息]的影响。测量结果表明，所设计的带有支撑柱的薄膜体声波谐振器可实现[此处原文缺失关键信息]值有25.9%的可调性。
