School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China.
State Key Laboratory and Institute of Elemento-Organic Chemistry, Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China.
Adv Mater. 2023 Apr;35(15):e2209181. doi: 10.1002/adma.202209181. Epub 2023 Mar 4.
More than 55% of electronic failures are caused by damage from localized overheating. Up to now, there is still no efficient method for targeted temperature control against localized overheating. Although some existing thermal management devices handle this issue by full coverage cooling, it generates a lot of useless energy consumption. Here, a highly efficient pixel-matrix electrocaloric (EC) cooling device is reported, which can realize a targeted and differential thermal management. The modified poly(vinylidene fluoride-tertrifluoroethylene-chlorofluoroethylene) reaches a large adiabatic temperature change of 7.8 K and is more suitable for thermal transfer and electrostatic actuation at high frequencies. All active pixels in the EC cooling device exhibit a stable temperature span of 4.6 K and a heat flux of 62 mW cm , which is more than twice that of the one-layer EC device. Each refrigeration pixel can be independently controlled and effectively cooled down the localized overheating site(s) in situ. The surface temperature of the simulated central processing unit decreases by 33.2 K at 120 s after applying this EC device. Such a compact, embeddable, low cost, and active solid-state pixel-matrix cooling device has great potential for localized overheating protection in microelectronics.
超过 55%的电子故障是由局部过热引起的损坏造成的。到目前为止，仍然没有针对局部过热的有效靶向温度控制方法。虽然一些现有的热管理设备通过全面冷却来处理这个问题，但它会产生大量无用的能源消耗。在这里，我们报告了一种高效的像素矩阵电卡（EC）冷却装置，它可以实现有针对性和差异化的热管理。改性聚（偏二氟乙烯-三氟乙烯-氯氟乙烯）达到了 7.8 K 的大绝热温度变化，更适合于高频热传递和静电致动。EC 冷却装置中的所有有源像素都表现出 4.6 K 的稳定温度跨度和 62 mW cm 的热通量，是单层 EC 装置的两倍多。每个制冷像素都可以独立控制，并有效地原位冷却局部过热区域。在施加这种 EC 装置 120 秒后，模拟中央处理器的表面温度下降了 33.2 K。这种紧凑、可嵌入、低成本、主动的固态像素矩阵冷却装置在微电子领域的局部过热保护方面具有巨大的潜力。
