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无〈111〉取向的半导体纳米线:生长、性质与应用。

Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications.

机构信息

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.

School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China.

出版信息

Nanoscale. 2023 Feb 16;15(7):3032-3050. doi: 10.1039/d2nr06421a.

DOI:10.1039/d2nr06421a
PMID:36722935
Abstract

In recent years, non-〈111〉-oriented semiconductor nanowires have attracted increasing interest in terms of fundamental research and promising applications due to their outstanding crystal quality and distinctive physical properties. Here, a comprehensive overview of recent advances in the study of non-〈111〉-oriented semiconductor nanowires is presented. We start by introducing various growth techniques for obtaining nanowires with certain orientations, for which the growth energetics and kinetics are discussed. Attention is then given to the physical properties of non-〈111〉 nanowires, as predicted by theoretical calculations or demonstrated experimentally. After that, we review the advantages and challenges of non-〈111〉 nanowires as building blocks for electronic and optoelectronic devices. Finally, we discuss the possible challenges and opportunities in the research field of non-〈111〉 semiconductor nanowires.

摘要

近年来,由于具有出色的晶体质量和独特的物理性质,非〈111〉取向的半导体纳米线在基础研究和有前景的应用方面引起了越来越多的关注。本文对非〈111〉取向半导体纳米线的研究进展进行了全面综述。首先,我们介绍了获得具有特定取向的纳米线的各种生长技术,并讨论了其生长的能量学和动力学。然后,我们关注了理论计算预测或实验证明的非〈111〉纳米线的物理性质。之后,我们回顾了非〈111〉纳米线作为电子和光电子器件构建块的优势和挑战。最后,我们讨论了非〈111〉半导体纳米线研究领域可能面临的挑战和机遇。

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RSC Adv. 2023 Jul 27;13(33):22800-22813. doi: 10.1039/d3ra03825d. eCollection 2023 Jul 26.
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Crystal orientation-dependent tensile mechanical behavior and deformation mechanisms of zinc-blende ZnSe nanowires.纤锌矿型 ZnSe 纳米线的晶体取向依赖拉伸力学性能和变形机制。
Sci Rep. 2023 Mar 2;13(1):3532. doi: 10.1038/s41598-023-30601-3.