School of Materials and Physics, China University of Mining and Technology, Xuzhou, 221116, China.
School of Physics, Southeast University, Nanjing, 211189, China.
Phys Chem Chem Phys. 2023 Feb 15;25(7):5878-5884. doi: 10.1039/d2cp05294f.
A van der Waals intrinsic ferromagnet with double magnetic atom layers is of great interest for both revealing fundamental physics and exploring promising applications in low-dimensional spintronics. Here, the magnetic and electronic properties of the van der Waals ferromagnet MgVS monolayer are studied under electrostatic doping using first-principles calculations. A MgVS monolayer presents the desired physical properties such as that of being a half-semiconductor with a direct bandgap of 1.21 eV and a ferromagnetic ground state, and having a high Curie temperature of 462 K. Unlike the robust ferromagnetic ground state, magnetic anisotropy and Curie temperature are sensitive to electrostatic doping. Meanwhile, the transition from a semiconductor to a half-metal and the significant improvement in conductivity under electrostatic doping make the MgVS monolayer a promising candidate for low-dimensional spintronic field-effect transistors.
具有双层磁原子的范德华本征铁磁体对于揭示基础物理和探索低维自旋电子学中很有前景的应用都非常重要。在这里，使用第一性原理计算研究了范德华铁磁体 MgVS 单层在静电掺杂下的磁和电子性质。MgVS 单层具有理想的物理性质，例如具有 1.21eV 的直接带隙的半半导体和铁磁基态，以及具有 462K 的居里温度。与稳定的铁磁基态不同，磁各向异性和居里温度对静电掺杂很敏感。同时，静电掺杂下从半导体到半金属的转变以及导电性的显著提高，使 MgVS 单层成为低维自旋电子场效应晶体管的有前途的候选材料。
