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用弗普尔-冯·卡门方程对石墨烯-聚合物异质结构微机电系统膜进行建模。

Modeling Graphene-Polymer Heterostructure MEMS Membranes with the Föppl-von Kármán Equations.

作者信息

Smith Katherine, Retallick Aidan, Melendrez Daniel, Vijayaraghavan Aravind, Heil Matthias

机构信息

Department of Materials and National Graphene Institute, The University of Manchester, ManchesterM13 9PL, U.K.

Department of Mathematics, The University of Manchester, ManchesterM13 9PL, U.K.

出版信息

ACS Appl Mater Interfaces. 2023 Feb 22;15(7):9853-9861. doi: 10.1021/acsami.2c21096. Epub 2023 Feb 7.

Abstract

Ultra-thin graphene-based membranes have shown significant promise for high-performance nano-electro-mechanical (NEMS) devices. The key challenge in the modeling of such membranes is that they often operate in deflection regimes where the assumptions or approximations of "pure bending" or "pure stretching" are not satisfied. We present a model of graphene-polymer heterostructure (GPH) NEMS membranes based on Föppl-von Kármán (FvK) equations which take into account both bending and stretching forces. The experimental GPH membrane shape obtained through atomic force microscopy topography mapping is compared to the inflation shapes predicted by FvK-based finite element method simulation, and they show excellent agreement with each other. When the GPH membranes are deflected under pressure in a capacitive pressure sensor configuration, the effectiveness of this model is further exemplified through accurately predicting the capacitance change of deflecting GPH membrane devices at varying pressures. This model serves as a powerful new tool in the design and development of graphene-based NEMS devices, being able to predict the performance of graphene NEMS devices or to aid in the design of device geometries to match required performances.

摘要

超薄石墨烯基薄膜在高性能纳米机电(NEMS)器件方面展现出了巨大的潜力。对此类薄膜进行建模的关键挑战在于,它们通常在挠曲状态下工作,此时“纯弯曲”或“纯拉伸”的假设或近似并不成立。我们基于考虑了弯曲力和拉伸力的弗普尔 - 冯·卡门(Föppl-von Kármán,FvK)方程,提出了一种石墨烯 - 聚合物异质结构(GPH)NEMS薄膜模型。通过原子力显微镜形貌映射获得的实验性GPH薄膜形状与基于FvK的有限元方法模拟预测的膨胀形状进行了比较,结果显示二者吻合度极高。当GPH薄膜在电容式压力传感器配置中受到压力而发生挠曲时,通过准确预测不同压力下挠曲的GPH薄膜器件的电容变化,进一步例证了该模型的有效性。该模型是石墨烯基NEMS器件设计与开发中的一个强大新工具,能够预测石墨烯NEMS器件的性能,或有助于设计器件几何形状以匹配所需性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/823f/9951177/91345d2671d2/am2c21096_0002.jpg

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