School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
J Phys Chem Lett. 2023 Feb 16;14(6):1656-1662. doi: 10.1021/acs.jpclett.2c03853. Epub 2023 Feb 8.
Green emissive InP-based quantum dots (QDs) remain less developed than red QDs because of the difficulty of controlling the reactivity of small InP cores. Herein, we report the synthesis of monodispersed green InP-based QDs using tris(dimethylamino)phosphine, a considerably inexpensive and safer phosphorus source compared to conventional tris(trimethylsilyl)phosphine. An organophosphorus compound, trioctylphosphine, was used to control the reaction kinetics by slowing the progression of the nucleation process, which weakened the aggregation behavior of the clusters and improved the size distribution. The synthesized green emissive InP/ZnSeS/ZnS QDs exhibited a photoluminescence (PL) peak at 515 nm with an enhancement of the full width at half-maximum from 66 to 46 nm and the PL quantum yield from 61% to 70%. An electroluminescent device was fabricated, and the electron transport layer was optimized by changing the layer thickness. The optimized device structure improved the charge balance and increased the external quantum efficiency from 2.1% to 3.5%.
基于磷化铟（InP）的绿色发光量子点（QDs）的发展不如红色 QDs 成熟，这是因为难以控制小的 InP 核的反应性。在此，我们报告了使用三（二甲氨基）膦（一种比传统的三（三甲基甲硅烷基）膦便宜且安全得多的磷源）合成单分散的绿色基于 InP 的 QDs。有机磷化合物三辛基膦通过减缓成核过程来控制反应动力学，从而减弱了团簇的聚集行为并改善了尺寸分布。合成的绿色发光 InP/ZnSeS/ZnS QDs 在 515nm 处表现出光致发光（PL）峰，半峰全宽从 66nm 增强到 46nm，PL 量子产率从 61%提高到 70%。制备了电致发光器件，并通过改变层厚度优化了电子传输层。优化后的器件结构改善了电荷平衡，并将外部量子效率从 2.1%提高到 3.5%。
