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通过有效控制晶轴间角度实现高功率因数以增强GeTe-CuTe合金的热电性能

High-Power Factor Enabled by Efficient Manipulation Interaxial Angle for Enhancing Thermoelectrics of GeTe-CuTe Alloys.

作者信息

Tan Xiaobo, Zhang Fujie, Zhu Jianglong, Xu Fang, Li Ruiheng, He Shan, Rao Xuri, Ang Ran

机构信息

Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China.

Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China.

出版信息

ACS Appl Mater Interfaces. 2023 Feb 22;15(7):9315-9323. doi: 10.1021/acsami.2c20740. Epub 2023 Feb 10.

Abstract

The emerged strategy of manipulating the rhombohedral crystal structure provides another new degree of freedom for optimizing the thermoelectric properties of GeTe-based compounds. However, the concept is difficult to be effectively measured and often depends on heavy doping that scatters carriers severely. Herein, we synergistically manipulate lattice distortion and vacancy concentration to promote the excellent electrical transport of GeTe-CuTe alloys and quantify the interaxial angle-dependent density of state effective mass. Distinct from the conventional electronic coupling effect, about 2% substitution of Zr significantly increases the interaxial angle, thereby enhancing the band convergence effect and improving the Seebeck coefficient. In addition, Ge-compensation attenuates the mobility deterioration, leading to improved power factor over the whole temperature range, especially exceeding ∼22 μW cm K at 300 K. Furthermore, the Debye-Callaway model elucidates low lattice thermal conductivity due to strong phonon scattering from Zr/Ge substitutional defects. As a result, the highest figure of merit of ∼1.6 (at 650 K) and average of ∼0.9 (300-750 K) are obtained in (GeZrTe)(CuTe). This work demonstrates the effective band modulation of Zr on GeTe-based materials, indicating that the modification of the interaxial angle is a deep pathway to improve thermoelectrics.

摘要

调控菱面体晶体结构所产生的策略为优化基于GeTe的化合物的热电性能提供了另一种新的自由度。然而,这一概念难以得到有效衡量,且往往依赖于严重散射载流子的重掺杂。在此,我们协同调控晶格畸变和空位浓度,以促进GeTe-CuTe合金优异的电输运,并量化与轴间角相关的态密度有效质量。与传统的电子耦合效应不同,约2%的Zr替代显著增大了轴间角,从而增强了能带收敛效应并提高了塞贝克系数。此外,Ge补偿减弱了迁移率的恶化,使得在整个温度范围内功率因子都得到提高,特别是在300 K时超过了22 μW cm K。此外,德拜-卡拉韦模型阐明了由于Zr/Ge替代缺陷导致的强声子散射而产生的低晶格热导率。结果,在(GeZrTe)(CuTe)中获得了最高优值1.6(在650 K时)和平均优值~0.9(300 - 750 K)。这项工作展示了Zr对基于GeTe的材料的有效能带调制,表明轴间角的改变是改善热电材料性能的一条深入途径。

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