Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.
Sensors (Basel). 2023 Jan 17;23(3):1088. doi: 10.3390/s23031088.
This paper presents a thorough analysis of the current-voltage characteristics of uncooled HgCdTe detectors optimized for different spectral ranges. HgCdTe heterostructures were grown by means of metal-organic chemical vapor deposition (MOCVD) on GaAs substrates. The obtained detector structures were measured using a Keysight B1500A semiconductor device analyser controlled via LabVIEW for automation. The experimental characteristics were compared with numerical calculations performed using the commercial platform SimuAPSYS (Crosslight). SimuAPSYS supports detector design and allows one to understand different mechanisms occurring in the analysed structures. The dark current density experimental data were compared with theoretical results at a temperature of 300 K for short, medium, and long wavelength infrared ranges. The dark current density of detectors optimized for different wavelengths was determined using various generation-recombination mechanisms. Proper matching between experimental and theoretical data was obtained by shifting the Shockley-Read-Hall carrier lifetime and the Auger-1 and Auger-7 recombination rates. Exemplary spectral responses were also discussed, giving a better insight into detector performance. The matching level was proven with a theoretical evaluation of the zero-bias dynamic resistance-area product () and the current responsivity of the designed detectors.
本文对针对不同光谱范围优化的非制冷 HgCdTe 探测器的电流-电压特性进行了全面分析。HgCdTe 异质结构是通过金属有机化学气相沉积（MOCVD）在 GaAs 衬底上生长的。使用 Keysight B1500A 半导体器件分析仪通过 LabVIEW 进行自动化控制来测量获得的探测器结构。将实验特性与使用商业平台 SimuAPSYS（Crosslight）进行的数值计算进行了比较。SimuAPSYS 支持探测器设计，并允许人们了解分析结构中发生的不同机制。在 300 K 的温度下，将短、中和长波长红外范围内的实验暗电流密度数据与理论结果进行了比较。通过使用各种产生-复合机制，确定了针对不同波长优化的探测器的暗电流密度。通过调整 Shockley-Read-Hall 载流子寿命和 Auger-1 和 Auger-7 复合速率，可以获得实验数据与理论数据之间的良好匹配。还讨论了示例光谱响应，从而更好地了解探测器性能。通过对设计探测器的零偏动态电阻-面积乘积（）和电流响应的理论评估，证明了匹配水平。
