Cao Peng, Wang Tiancai, Peng Hongling, Zhuang Qiandong, Zheng Wanhua
Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Materials (Basel). 2023 Jun 23;16(13):4538. doi: 10.3390/ma16134538.
Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb substrates and InP substrates are demonstrated. The devices have a pBn structure that employs an AlGaAsSb thin layer as the electron barrier to suppress dark current density. The strain effect on the electrical performance of the devices was specifically studied through the growth of the pBn structure on different substrates, e.g., InP and GaSb, via a specific buffering technique to optimize material properties and minimize dark current. A lower device dark current density, down to 1 × 10 A/cm at room temperature (295 K), was achieved for the devices grown on the GaSb substrate compared to that of the devices on the InP substrate (8.6 × 10 A/cm). The improved properties of the high-In component InGaAs layer and the AlGaAsSb electron barrier give rise to the low dark current of the photodetector device.
展示了基于在GaSb衬底和InP衬底上生长的变质InGaAs的短波红外光电探测器。这些器件具有pBn结构，采用AlGaAsSb薄层作为电子势垒来抑制暗电流密度。通过经由特定缓冲技术在不同衬底（例如InP和GaSb）上生长pBn结构，专门研究了应变对器件电学性能的影响，以优化材料特性并最小化暗电流。与在InP衬底上生长的器件（8.6×10 A/cm）相比，在GaSb衬底上生长的器件在室温（295 K）下实现了更低的器件暗电流密度，低至1×10 A/cm。高In组分InGaAs层和AlGaAsSb电子势垒的改进特性导致了光电探测器器件的低暗电流。
