Fan Xiang-Bing, Shin Dong-Wook, Lee Sanghyo, Ye Junzhi, Yu Shan, Morgan David J, Arbab Adrees, Yang Jiajie, Jo Jeong-Wan, Kim Yoonwoo, Jung Sung-Min, Davies Philip R, Rao Akshay, Hou Bo, Kim Jong Min
Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK.
The Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK.
Nanoscale Horiz. 2023 Mar 27;8(4):522-529. doi: 10.1039/d2nh00436d.
InP quantum dots (QDs) are attracting significant interest as a potentially less toxic alternative to Cd-based QDs in many research areas. Although InP-based core/shell QDs with excellent photoluminescence properties have been reported so far, sophisticated interface treatment to eliminate defects is often necessary. Herein, using aminophosphine as a seeding source of phosphorus, we find that HS can be efficiently generated from the reaction between a thiol and an alkylamine at high temperatures. Apart from general comprehension that HS acts as a S precursor, it is revealed that with core etching by HS, the interface between InP and ZnS can be reconstructed with S incorporation. Such a transition layer can reduce inherent defects at the interface, resulting in significant photoluminescence (PL) enhancement. Meanwhile, the size of the InP core could be further controlled by HS etching, which offers a feasible process to obtain wide band gap InP-based QDs with blue emission.
磷化铟量子点（QDs）作为一种在许多研究领域中潜在毒性较低的镉基量子点替代品，正引起人们的极大关注。尽管迄今为止已经报道了具有优异光致发光性能的基于磷化铟的核壳量子点，但通常需要进行复杂的界面处理以消除缺陷。在此，我们使用氨基膦作为磷的种子源，发现在高温下硫醇与烷基胺之间的反应可以有效地生成HS。除了普遍认为HS作为硫前驱体的理解之外，还发现通过HS进行核蚀刻时，InP和ZnS之间的界面可以通过掺入S来重建。这样的过渡层可以减少界面处的固有缺陷，从而导致显著的光致发光（PL）增强。同时，InP核的尺寸可以通过HS蚀刻进一步控制，这为获得具有蓝光发射的宽带隙基于InP的量子点提供了一种可行的方法。
