Yoo Jaehyeong, Joe Sung-Yoon, Ko Jae-Hyeon
School of Nano Convergence Technology, Nano Convergence Technology Center, Hallym University, Chuncheon 24252, Gangwondo, Republic of Korea.
Materials (Basel). 2025 Sep 5;18(17):4172. doi: 10.3390/ma18174172.
This study investigates the interfacial structural origin of enhanced optical performance in InP-based quantum dots (QDs) employing a 2-step ZnSe shelling strategy. By comparing InP/ZnSe/ZnS QDs synthesized via 1-step and 2-step shelling methods using identical InP cores, we demonstrate that the 2-step approach results in improved core-shell lattice matching, more favorable carrier dynamics, and enhanced thermal stability. These enhancements are attributed to the formation of an initial thin ZnSe interfacial layer, which facilitates uniform shell growth and suppresses interfacial defect formation. High-resolution transmission electron microscopy and elemental mapping via energy-dispersive X-ray spectroscopy analyses confirm the improved crystallinity and reduced oxygen-related trap states in the 2-step samples. The findings highlight the critical role of interfacial control in determining QD performance and establish the 2-step ZnSe shelling strategy as an effective route to achieving structurally and optically robust QD emitters for advanced optoelectronic applications.
本研究采用两步法ZnSe壳层包覆策略，探究了基于InP的量子点（QDs）光学性能增强的界面结构起源。通过比较使用相同InP核，采用一步法和两步法壳层包覆方法合成的InP/ZnSe/ZnS量子点，我们证明两步法可实现更好的核壳晶格匹配、更有利的载流子动力学以及更高的热稳定性。这些增强效果归因于初始薄ZnSe界面层的形成，该界面层有助于壳层均匀生长并抑制界面缺陷的形成。高分辨率透射电子显微镜和能量色散X射线光谱分析的元素映射证实了两步法样品中结晶度的提高和与氧相关的陷阱态的减少。这些发现突出了界面控制在决定量子点性能方面的关键作用，并确立了两步法ZnSe壳层包覆策略作为实现用于先进光电子应用的结构和光学稳健的量子点发光体的有效途径。
