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铈掺杂氧化铟作为半透明钙钛矿太阳能电池的顶电极。

Cerium-Doped Indium Oxide as a Top Electrode of Semitransparent Perovskite Solar Cells.

作者信息

Zhang Limeng, Che Zhigang, Shang Jiacheng, Wang Qi, Cao Miaojia, Zhou Yurong, Zhou Yuqin, Liu Fengzhen

机构信息

Center of Materials Science and Opto-Electronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101409 China.

出版信息

ACS Appl Mater Interfaces. 2023 Mar 1;15(8):10838-10846. doi: 10.1021/acsami.2c22942. Epub 2023 Feb 20.

DOI:10.1021/acsami.2c22942
PMID:36802466
Abstract

Semitransparent perovskite solar cells (ST-PSCs) play a very important role in high-efficiency tandem solar cells and building integrated photovoltaics (BIPV). One of the main challenges for high-performance ST-PSCs is to obtain suitable top-transparent electrodes by appropriate methods. Transparent conductive oxide (TCO) films, as the most widely used transparent electrodes, are also adopted in ST-PSCs. However, the possible ion bombardment damage during the TCO deposition and the relatively high postannealing temperature usually required for high-quality TCO films is not conducive to improving the performance of the perovskite solar cells with low ion bombardment and temperature tolerances. Herein, cerium-doped indium oxide (ICO) thin films are prepared by reactive plasma deposition (RPD) at substrate temperatures below 60 °C. A high carrier mobility of 50.26 cm V s, a low resistivity of 7.18 × 10 Ω·cm, and an average transmittance of 86.53% in the wavelength range of 400-800 nm and 87.37% in the wavelength range of 800-1200 nm are achieved. The RPD-prepared ICO film is used as a transparent electrode on top of the ST-PSCs (band gap ∼1.68 eV), and photovoltaic conversion efficiency (PCE) of 18.96% is achieved on the champion device.

摘要

半透明钙钛矿太阳能电池(ST-PSCs)在高效串联太阳能电池和建筑一体化光伏(BIPV)中发挥着非常重要的作用。高性能ST-PSCs的主要挑战之一是通过适当的方法获得合适的顶部透明电极。透明导电氧化物(TCO)薄膜作为应用最广泛的透明电极,也被用于ST-PSCs。然而,TCO沉积过程中可能的离子轰击损伤以及高质量TCO薄膜通常所需的较高退火温度不利于提高对离子轰击和温度耐受性较低的钙钛矿太阳能电池的性能。在此,通过反应等离子体沉积(RPD)在低于60°C的衬底温度下制备了铈掺杂氧化铟(ICO)薄膜。实现了50.26 cm² V⁻¹ s⁻¹的高载流子迁移率、7.18×10⁻⁴ Ω·cm的低电阻率,以及在400 - 800 nm波长范围内86.53%和在800 - 1200 nm波长范围内87.37%的平均透过率。将RPD制备的ICO薄膜用作ST-PSCs(带隙约1.68 eV)顶部的透明电极,在最佳器件上实现了18.96%的光电转换效率(PCE)。

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