Department of Mechanical Convergence Engineering, Hanyang University , 17 Haendang-Dong, Seongdong-Gu, Seoul 133-791 South Korea.
Institute of Nano Science and Technology, Hanyang University , Seoul, 133-791 South Korea.
ACS Appl Mater Interfaces. 2016 Apr 6;8(13):8591-9. doi: 10.1021/acsami.5b12516. Epub 2016 Mar 28.
In this work, an intensive plasmonic flash light sintering technique was developed by using a band-pass light filter matching the plasmonic wavelength of the copper nanoparticles. The sintering characteristics, such as resistivity and microstructure, of the copper nanoink films were studied as a function of the range of the wavelength employed in the flash white light sintering. The flash white light irradiation conditions (e.g., wavelength range, irradiation energy, pulse number, on-time, and off-time) were optimized to obtain a high conductivity of the copper nanoink films without causing damage to the polyimide substrate. The wavelength range corresponding to the plasmonic wavelength of the copper nanoparticles could efficiently sinter the copper nanoink and enhance its conductivity. Ultimately, the sintered copper nanoink films under optimal light sintering conditions showed the lowest resistivity (6.97 μΩ·cm), which was only 4.1 times higher than that of bulk copper films (1.68 μΩ·cm).
在这项工作中，通过使用与铜纳米粒子的等离子体波长匹配的带通滤光片，开发了一种强化等离子体闪光光烧结技术。研究了铜纳米墨水薄膜的烧结特性，如电阻率和微观结构，作为在闪光白光烧结中使用的波长范围的函数。优化了闪光白光照射条件（例如，波长范围、照射能量、脉冲数、通光时间和关光时间），以在不损坏聚酰亚胺基底的情况下获得铜纳米墨水薄膜的高导电性。与铜纳米粒子的等离子体波长相对应的波长范围可以有效地烧结铜纳米墨水并提高其导电性。最终，在最佳的光烧结条件下烧结的铜纳米墨水薄膜表现出最低的电阻率（6.97 μΩ·cm），仅比块状铜薄膜（1.68 μΩ·cm）高 4.1 倍。
