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二维单元素室温铁磁体的范德华外延生长。

Van der Waals Epitaxy Growth of 2D Single-Element Room-Temperature Ferromagnet.

机构信息

Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China.

CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.

出版信息

Adv Mater. 2023 May;35(19):e2211701. doi: 10.1002/adma.202211701. Epub 2023 Mar 23.

Abstract

2D single-element materials, which are pure and intrinsically homogeneous on the nanometer scale, can cut the time-consuming material-optimization process and circumvent the impure phase, bringing about opportunities to explore new physics and applications. Herein, for the first time, the synthesis of ultrathin cobalt single-crystalline nanosheets with a sub-millimeter scale via van der Waals epitaxy is demonstrated. The thickness can be as low as ≈6 nm. Theoretical calculations reveal their intrinsic ferromagnetic nature and epitaxial mechanism: that is, the synergistic effect between van der Waals interactions and surface energy minimization dominates the growth process. Cobalt nanosheets exhibit ultrahigh blocking temperatures above 710 K and in-plane magnetic anisotropy. Electrical transport measurements further reveal that cobalt nanosheets have significant magnetoresistance (MR) effect, and can realize a unique coexistence of positive MR and negative MR under different magnetic field configurations, which can be attributed to the competition and cooperation effect among ferromagnetic interaction, orbital scattering, and electronic correlation. These results provide a valuable case for synthesizing 2D elementary metal crystals with pure phase and room-temperature ferromagnetism and pave the way for investigating new physics and related applications in spintronics.

摘要

二维单元素材料在纳米尺度上是纯净且本征均匀的,可缩短耗时的材料优化过程,并避免不纯相的问题,为探索新物理和应用提供了机会。在此,首次通过范德华外延展示了亚毫米尺度超薄钴单晶纳米片的合成。其厚度低至约 6nm。理论计算揭示了其本征铁磁性质和外延机制:范德华相互作用和表面能最小化的协同效应主导了生长过程。钴纳米片表现出超高的逾 710 K 阻塞温度和面内磁各向异性。电输运测量进一步表明,钴纳米片具有显著的磁电阻(MR)效应,并且在不同磁场配置下可以实现正 MR 和负 MR 的独特共存,这归因于铁磁相互作用、轨道散射和电子相关之间的竞争和合作效应。这些结果为合成具有纯相和室温铁磁性的二维基本金属晶体提供了有价值的范例,并为探索自旋电子学中的新物理和相关应用铺平了道路。

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