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在 P3HT 和半导体碳纳米管的有机光伏复合体系中,电荷转移态的快速复合是导致其光伏性能不佳的原因。

Fast Recombination of Charge-Transfer State in Organic Photovoltaic Composite of P3HT and Semiconducting Carbon Nanotubes Is the Reason for Its Poor Photovoltaic Performance.

机构信息

Voevodsky Institute of Chemical Kinetics and Combustion of the Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia.

Siberian Physico-Technical Institute of the Tomsk State University, 634050 Tomsk, Russia.

出版信息

Int J Mol Sci. 2023 Feb 17;24(4):4098. doi: 10.3390/ijms24044098.

Abstract

Although the photovoltaic performance of the composite of poly-3-hexylthiophene (P3HT) with semiconducting single-walled carbon nanotubes (s-SWCNT) is promising, the short-circuit current density is much lower than that for typical polymer/fullerene composites. Out-of-phase electron spin echo (ESE) technique with laser excitation of the P3HT/s-SWCNT composite was used to clarify the origin of the poor photogeneration of free charges. The appearance of out-of-phase ESE signal is a solid proof that the charge-transfer state of P3HT/s-SWCNT is formed upon photoexcitation and the electron spins of P3HT and s-SWCNT are correlated. No out-of-phase ESE signal was detected in the same experiment with pristine P3HT film. The out-of-phase ESE envelope modulation trace for P3HT/s-SWCNT composite was close to that for the polymer/fullerene photovoltaic composite PCDTBT/PCBM, which implies a similar distance of initial charge separation in the range 2-4 nm. However, out-of-phase ESE signal decay with delay after laser flash increase for P3HT/s-SWCNT composite was much faster, with a characteristic time of 10 µs at 30 K. This points to the higher geminate recombination rate for the P3HT/s-SWCNT composite, which may be one of the reasons for the relatively poor photovoltaic performance of this system.

摘要

尽管聚-3-己基噻吩(P3HT)与半导体单壁碳纳米管(s-SWCNT)的复合材料的光伏性能很有前景,但短路电流密度却远低于典型的聚合物/富勒烯复合材料。采用激光激发 P3HT/s-SWCNT 复合材料的反相电子自旋回波(ESE)技术来阐明自由电荷光生的较差的原因。反相 ESE 信号的出现是 P3HT/s-SWCNT 电荷转移态在光激发下形成的有力证据,并且 P3HT 和 s-SWCNT 的电子自旋是相关的。在具有原始 P3HT 膜的相同实验中,没有检测到反相 ESE 信号。P3HT/s-SWCNT 复合材料的反相 ESE 包络调制迹线与聚合物/富勒烯光伏复合材料 PCDTBT/PCBM 非常接近,这意味着初始电荷分离的距离相似,在 2-4nm 范围内。然而,对于 P3HT/s-SWCNT 复合材料,激光闪光后延迟的反相 ESE 信号衰减要快得多,在 30K 时的特征时间为 10µs。这表明 P3HT/s-SWCNT 复合材料的复合重组率较高,这可能是该体系光伏性能相对较差的原因之一。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a3a/9961616/0596b59ba08b/ijms-24-04098-g001.jpg

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