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通过 DABr 处理,制备具有抑制界面复合的分级 2D/3D 钙钛矿杂化结构薄膜,实现高效稳定的太阳能电池。

Graded 2D/3D Perovskite Hetero-Structured Films with Suppressed Interfacial Recombination for Efficient and Stable Solar Cells via DABr Treatment.

机构信息

Provincial Key Laboratory of Solid-State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China.

Division of Science and Technology, Department of Physics, University of Education Campus Dera Ghazi Khan, Multan 32200, Pakistan.

出版信息

Molecules. 2023 Feb 7;28(4):1592. doi: 10.3390/molecules28041592.

Abstract

Several strategies and approaches have been reported for improving the resilience and optoelectronic properties of perovskite films. However, fabricating a desirable and stable perovskite absorber layer is still a great challenge due to the optoelectronic and fabrication limitations of the materials. Here, we introduce diethylammonium bromide (DABr) as a post-treatment material for the pre-deposited methylammonium lead iodide (MAPbI) film to fabricate a high-quality two-dimensional/three-dimensional (2D/3D) stacked hetero-structure perovskite film. The post-treatment method of DABr not only induces the small crystals of MAPbI perovskite secondary growth into a large crystal, but also forms a 2D capping layer on the surface of the 3D MAPbI3 film. Meanwhile, the grains and crystallization of 3D film with DABr post-treatment are significantly improved, and the surface defect density is remarkably reduced, which in turn effectively suppressed the charge recombination in the interface between the perovskite layer and the charge transport layer. The perovskite solar cell based on the DABr-treatment exhibited a significantly enhanced power conversion efficiency (PCE) of 19.10% with a notable improvement in the open circuit voltage () of 1.06 V and good stability, advocating the potential of this perovskite post-treatment approach.

摘要

已经报道了几种提高钙钛矿薄膜的韧性和光电性能的策略和方法。然而,由于材料的光电和制造限制,制造理想和稳定的钙钛矿吸收层仍然是一个巨大的挑战。在这里,我们引入溴化二乙铵(DABr)作为预处理的碘化甲基铵铅(MAPbI)薄膜的后处理材料,以制备高质量的二维/三维(2D/3D)堆叠异质结构钙钛矿薄膜。DABr 的后处理方法不仅诱导 MAPbI 钙钛矿小晶体的二次生长成大晶体,而且在 3D MAPbI3 薄膜表面形成二维覆盖层。同时,经过 DABr 后处理的 3D 薄膜的晶粒和结晶度显著提高,表面缺陷密度显著降低,从而有效抑制了钙钛矿层和电荷传输层界面处的电荷复合。基于 DABr 处理的钙钛矿太阳能电池表现出显著增强的功率转换效率(PCE)为 19.10%,开路电压(V oc)显著提高到 1.06V,并且具有良好的稳定性,提倡这种钙钛矿后处理方法的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6d8e/9964978/510fe529c050/molecules-28-01592-g001.jpg

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