Evangeline T Gecil, Annamalai A Raja, Ctibor Pavel
School of Mechanical Engineering, Vellore Institute of Technology, Vellore 632014, India.
Centre for Innovative Manufacturing Research, Vellore Institute of Technology, Vellore 632014, India.
Molecules. 2023 Feb 8;28(4):1649. doi: 10.3390/molecules28041649.
In this work, EuO-doped (CaCuTiO) of low dielectric loss have been fabricated using both conventional (CS) and microwave sintering (MWS), where x = EuO = 0.1, 0.2, and 0.3, respectively. According to X-ray diffraction (XRD) and scanning electron microscope (SEM) reports, increasing the concentration of Eu in the CCTO lattice causes the grain size of the MWS samples to increase and vice versa for CS. The X-ray photoelectron spectroscopy (XPS) delineated the binding energies and charge states of the Cu/Cu and Ti/Ti transition ions. Energy dispersive spectroscopy (EDS) analysis revealed no Cu-rich phase along the grain boundaries that directly impacts the dielectric properties. The dielectric characteristics, which include dielectric constant (ε) and the loss (tan δ), were examined using broadband dielectric spectrometer (BDS) from 10 to 10 Hz at ambient temperature. The dielectric constant was >10 and >10 for CS and MWS samples at x > 0.1, respectively, with the low loss being constant even at high frequencies due to the effective suppression of tan δ by Eu. This ceramic of low dielectric loss has potential for commercial applications at comparatively high frequencies.
在这项工作中，使用传统烧结（CS）和微波烧结（MWS）制备了低介电损耗的EuO掺杂（CaCuTiO），其中x = EuO分别为0.1、0.2和0.3。根据X射线衍射（XRD）和扫描电子显微镜（SEM）报告，增加CCTO晶格中Eu的浓度会导致MWS样品的晶粒尺寸增加，而CS样品则相反。X射线光电子能谱（XPS）描绘了Cu/Cu和Ti/Ti过渡离子的结合能和电荷状态。能量色散谱（EDS）分析表明，沿晶界不存在直接影响介电性能的富铜相。使用宽带介电谱仪（BDS）在室温下从10到10 Hz测量了包括介电常数（ε）和损耗（tanδ）在内的介电特性。对于x > 0.1的CS和MWS样品，介电常数分别>10和>10，由于Eu有效抑制了tanδ，即使在高频下低损耗也保持恒定。这种低介电损耗陶瓷在相对较高频率下具有商业应用潜力。
