Fu Xueqiong
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
Nanomaterials (Basel). 2023 Feb 6;13(4):641. doi: 10.3390/nano13040641.
The plastic deformation mechanisms of Ni/AlO interface systems under tensile loading at high strain rates were investigated by the classical molecular dynamics (MD) method. A Rahman-Stillinger-Lemberg potential was used for modeling the interaction between Ni and Al atoms and between Ni and O atoms at the interface. To explore the dislocation nucleation and propagation mechanisms during interface tensile failure, two kinds of interface structures corresponding to the terminating Ni layer as buckling layer (Type I) and transition layer (Type II) were established. The fracture behaviors show a strong dependence on interface structure. For Type I interface samples, the formation of Lomer-Cottrell locks in metal causes strain hardening; for Type II interface samples, the yield strength is 40% higher than that of Type I due to more stable Ni-O bonds at the interface. At strain rates higher than 1×109 s-1, the formation of L-C locks in metal is suppressed (Type I), and the formation of Shockley dislocations at the interface is delayed (Type II). The present work provides the direct observation of nucleation, motion, and reaction of dislocations associated with the complex interface dislocation structures of Ni/AlO interfaces and can help researchers better understand the deformation mechanisms of this interface at extreme conditions.
采用经典分子动力学(MD)方法研究了Ni/AlO界面体系在高应变速率拉伸载荷下的塑性变形机制。采用Rahman-Stillinger-Lemberg势来模拟界面处Ni与Al原子之间以及Ni与O原子之间的相互作用。为了探究界面拉伸破坏过程中的位错形核与扩展机制,建立了两种对应于终止Ni层为屈曲层(I型)和过渡层(II型)的界面结构。断裂行为强烈依赖于界面结构。对于I型界面样品,金属中Lomer-Cottrell位错偶的形成导致应变硬化;对于II型界面样品,由于界面处更稳定的Ni-O键,其屈服强度比I型高40%。在应变速率高于1×109 s-1时,金属中L-C位错偶的形成受到抑制(I型),界面处Shockley位错的形成延迟(II型)。本工作直接观察了与Ni/AlO界面复杂界面位错结构相关的位错形核、运动和反应,有助于研究人员更好地理解该界面在极端条件下的变形机制。