Men Yong, Magkoev Tamerlan T, Behjatmanesh-Ardakani Reza, Zaalishvili Vladislav B, Ashkhotov Oleg G
School of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620, China.
Laboratory of Adsorption Phenomena, Department of Condensed Matter Physics, North Ossetian State University, Vatutina 44-46, 362025 Vladikavkaz, Russia.
Nanomaterials (Basel). 2023 Feb 7;13(4):651. doi: 10.3390/nano13040651.
In-situ formation of boron thin films on the Mo(110) surface, as well as the formation of the molybdenum boride and its oxide and the trends of carbon monoxide catalytic oxidation on the substrates formed, have been studied in an ultra-high vacuum (UHV) by a set of surface-sensitive characterization techniques: Auger and X-ray photoelectron spectroscopy (AES, XPS), low-energy ion scattering (LEIS), reflection-absorption infrared spectroscopy (RAIRS), temperature-programmed desorption (TPD), electron energy loss spectroscopy (EELS) and work function measurements using the Anderson method. The boron deposited at Mo(110) via electron-beam deposition at a substrate temperature of 300 K grows as a 2D layer, at least in submonolayer coverage. Such a film is bound to the Mo(110) via polarized chemisorption bonds, dramatically changing the charge density at the substrate surface manifested by the Mo(110) surface plasmon damping. Upon annealing of the B-Mo(110) system, the boron diffuses into the Mo(110) bulk following a two-mode regime: (1) quite easy dissolution, starting at a temperature of about 450 K with an activation energy of 0.4 eV; and (2) formation of molybdenum boride at a temperature higher than 700 K with M-B interatomic bonding energy of 3.8 eV. The feature of the formed molybdenum boride is that there is quite notable carbon monoxide oxidation activity on its surface. A further dramatic increase of such an activity is achieved when the molybdenum boride is oxidized. The latter is attributed to more activated states of molecular orbitals of coadsorbed carbon monoxide and oxygen due to their enhanced interaction with both boron and oxygen species for MoBO ternary compound, compared to only boron for the MoB double alloy.
通过俄歇电子能谱和X射线光电子能谱(AES、XPS)、低能离子散射(LEIS)、反射吸收红外光谱(RAIRS)、程序升温脱附(TPD)、电子能量损失谱(EELS)以及使用安德森方法进行的功函数测量等一系列表面敏感表征技术,在超高真空(UHV)中研究了Mo(110)表面硼薄膜的原位形成、硼化钼及其氧化物的形成以及在形成的衬底上一氧化碳催化氧化的趋势。在300 K衬底温度下通过电子束沉积在Mo(110)上沉积的硼至少在亚单层覆盖时以二维层的形式生长。这样的薄膜通过极化化学吸附键与Mo(110)结合,显著改变了由Mo(110)表面等离子体阻尼表现出的衬底表面电荷密度。对B-Mo(110)体系进行退火时,硼以两种模式扩散到Mo(110)体相中:(1)在约450 K的温度下开始,激活能为0.4 eV时相当容易溶解;(2)在高于700 K的温度下形成硼化钼,M-B原子间结合能为3.8 eV。形成的硼化钼的特点是其表面具有相当显著的一氧化碳氧化活性。当硼化钼被氧化时,这种活性会进一步显著增加。后者归因于与MoB双合金仅含硼相比,对于MoBO三元化合物,共吸附的一氧化碳和氧的分子轨道由于与硼和氧物种的增强相互作用而具有更多的激活态。