Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China.
Ordered Matter Science Research Center, Nanchang University, Nanchang, 330031, P. R. China.
Adv Mater. 2023 May;35(19):e2211584. doi: 10.1002/adma.202211584. Epub 2023 Mar 23.
Achieving a periodic domain structure in ferroelectric materials to tailor the macroscopic properties or realize new functions has always been a hot topic. However, methods to construct periodic domain structures, such as epitaxial growth, direct writing by scanning tips, and the patterned electrode method, are difficult or inefficient to implement in emerging molecular ferroelectrics, which have the advantages of lightweight, flexibility, biocompatibility, etc. An efficient method for constructing and controlling periodic domain structures is urgently needed to facilitate the development of molecular ferroelectrics in nanoelectronic devices. In this work, it is demonstrated that large-area, periodic and controllable needle-like domain structures can be achieved in thin films of the molecular ferroelectric trimethylchloromethyl ammonium trichlorocadmium (TMCM-CdCl ) upon the application of tensile strain. The domain evolution under various tensile strains can be clearly observed, and such processes are accordingly identified. Furthermore, the domain wall exhibits a superior piezoelectric response, with up to fivefold enhancement compared to that of the pristine samples. Such large-area tunable periodic domain structure and abnormally strong piezoresponse are not only of great interests in fundamental studies, but also highly important in the future applications in functional molecular materials.
在铁电材料中实现周期性畴结构以调整宏观性质或实现新功能一直是一个热门话题。然而,构建周期性畴结构的方法,如外延生长、扫描探针的直接写入和图案化电极方法,在新兴的分子铁电体中难以实施或效率低下,因为分子铁电体具有重量轻、柔韧性、生物相容性等优点。因此,迫切需要一种有效的方法来构建和控制周期性畴结构,以促进分子铁电体在纳米电子器件中的发展。在这项工作中,证明了在拉伸应变作用下,三甲基氯甲基铵三氯化镉(TMCM-CdCl )分子铁电体薄膜中可以实现大面积、周期性和可控的针状畴结构。可以清楚地观察到不同拉伸应变下的畴演变,并相应地对其进行了识别。此外,畴壁表现出优异的压电响应,与原始样品相比,增强了五倍。这种大面积可调谐的周期性畴结构和异常强的压电阻应不仅在基础研究中具有重要意义,而且在未来的功能分子材料应用中也具有重要意义。