Ali Md Hasan, Al Mamun Md Abdullah, Haque Md Dulal, Rahman Md Ferdous, Hossain M Khalid, Md Touhidul Islam Abu Zafor
Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, Rangpur 5400, Bangladesh.
Department of Electronics and Communication Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur 5200, Bangladesh.
ACS Omega. 2023 Feb 8;8(7):7017-7029. doi: 10.1021/acsomega.2c07846. eCollection 2023 Feb 21.
Researchers are currently showing interest in molybdenum disulfide (MoS)-based solar cells due to their remarkable semiconducting characteristics. The incompatibility of the band structures at the BSF/absorber and absorber/buffer interfaces, as well as carrier recombination at the rear and front metal contacts, prevents the expected result from being achieved. The main purpose of this work is to enhance the performance of the newly proposed Al/ITO/TiO/MoS/InTe/Ni solar cell and investigate the impacts of the InTe BSF and TiO buffer layer on the performance parameters of open-circuit voltage ( ), short-circuit current density ( ), fill factor (FF), and power conversion efficiency (PCE). This research has been performed by utilizing SCAPS simulation software. The performance parameters such as variation of thickness, carrier concentration, the bulk defect concentration of each layer, interface defect, operating temperature, capacitance-voltage (-), surface recombination velocity, and front as well as rear electrodes have been analyzed to achieve a better performance. This device performs exceptionally well at lower carrier concentrations (1 × 10 cm) in a thin (800 nm) MoS absorber layer. The PCE, , , and FF values of the Al/ITO/TiO/MoS/Ni reference cell have been estimated to be 22.30%, 0.793 V, 30.89 mA/cm, and 80.62% respectively, while the PCE, , , and FF values have been determined to be 33.32%, 1.084 V, 37.22 mA/cm, and 82.58% for the Al/ITO/TiO/MoS/InTe/Ni proposed solar cell by introducing InTe between the absorber (MoS) and the rear electrode (Ni). The proposed research may give an insight and a feasible way to realize a cost-effective MoS-based thin-film solar cell.
由于二硫化钼（MoS）具有显著的半导体特性，研究人员目前对基于二硫化钼的太阳能电池很感兴趣。BSF/吸收层和吸收层/缓冲层界面处能带结构的不相容性，以及前后金属接触处的载流子复合，阻碍了预期结果的实现。这项工作的主要目的是提高新提出的Al/ITO/TiO/MoS/InTe/Ni太阳能电池的性能，并研究InTe背表面场（BSF）和TiO缓冲层对开路电压（ ）、短路电流密度（ ）、填充因子（FF）和功率转换效率（PCE）等性能参数的影响。本研究利用SCAPS模拟软件进行。分析了各层的厚度变化、载流子浓度、体缺陷浓度、界面缺陷、工作温度、电容-电压（-）、表面复合速度以及前后电极等性能参数，以实现更好的性能。该器件在薄（800 nm）MoS吸收层中较低载流子浓度（1×10 cm）下表现出色。Al/ITO/TiO/MoS/Ni参考电池的PCE、 、 和FF值分别估计为22.30%、0.793 V、30.89 mA/cm和80.62%，而通过在吸收层（MoS）和背电极（Ni）之间引入InTe，Al/ITO/TiO/MoS/InTe/Ni提出的太阳能电池的PCE、 、 和FF值分别确定为33.32%、1.084 V、37.22 mA/cm和82.58%。所提出的研究可能为实现具有成本效益的基于MoS的薄膜太阳能电池提供见解和可行方法。
