Ghosh Avijit, Hassan Abeer A, Alrafai H A, Abdelrahim Siham Khalaf Alla
Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, 5400, Bangladesh.
Department of Chemistry, Faculty of Science, King Khalid University, PO Box 9004, Abha, 61413, Saudi Arabia.
Heliyon. 2024 Jul 24;10(16):e35061. doi: 10.1016/j.heliyon.2024.e35061. eCollection 2024 Aug 30.
Researchers have recently shown a great deal of interest in molybdenum diselenide (MoSe)-based solar cells due to their outstanding semiconducting characteristics. However, discrepancies in the band arrangement at the MoSe/ETL (electron transport layer) and hole transport layer (HTL)/MoSe interfaces impede performances. In this research, a device combination with Ag/FTO/ETL/MoSe/HTL/Ni is employed, where 7 HTLs and 3 different ETLs have been utilized to explore which device arrangement is superior. To achieve the most effective device arrangement, the effects of various device variables, such as thickness, donor density, acceptor density, defect density, temperature, series, and shunt resistance, are optimized. The computational evaluation under AM 1.5 light spectrums (100 mW/cm) is performed using the SCAPS-1D simulator. When the several device parameters were optimized, the device that was correlated with Ag/FTO/SnS/MoSe/VO/Ni revealed the highest overall performances among the three different ETL (InS, SnS, ZnSe)-based devices, with measuring a PCE of 34.07 %, a V of 0.918 V, a J of 42.565 mAcm, and an FF of 87.19 %. This recommended MoSe-based solar cell exhibits outstanding efficiency in terms of maintenance and comparison to numerical thin film solar cells, highlighting MoSe as an attractive option for solar energy systems while eliminating toxicity challenges.
由于其出色的半导体特性，研究人员最近对基于二硒化钼（MoSe）的太阳能电池表现出了极大的兴趣。然而，MoSe/电子传输层（ETL）和空穴传输层（HTL）/MoSe界面处的能带排列差异阻碍了其性能。在本研究中，采用了Ag/FTO/ETL/MoSe/HTL/Ni的器件组合，其中使用了7种HTL和3种不同的ETL来探索哪种器件排列更优。为了实现最有效的器件排列，对各种器件变量的影响进行了优化，如厚度、施主密度、受主密度、缺陷密度、温度、串联电阻和并联电阻。使用SCAPS-1D模拟器在AM 1.5光谱（100 mW/cm）下进行计算评估。当优化了几个器件参数后，与Ag/FTO/SnS/MoSe/VO/Ni相关的器件在三种不同的基于ETL（InS、SnS、ZnSe）的器件中表现出最高的整体性能，其测量的光电转换效率（PCE）为34.07%，开路电压（V）为0.918 V，短路电流密度（J）为42.565 mA/cm²，填充因子（FF）为87.19%。这种推荐的基于MoSe的太阳能电池在维护方面以及与数值薄膜太阳能电池的比较中表现出出色的效率，突出了MoSe作为太阳能系统有吸引力的选择，同时消除了毒性挑战。
