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单轴应力作用下氢化(6,0)单壁碳纳米管的工程设计:一项密度泛函理论-半经验方法和分子动力学研究

Engineering of Hydrogenated (6,0) Single-Walled Carbon Nanotube under Applied Uniaxial Stress: A DFT-1/2 and Molecular Dynamics Study.

作者信息

Singh Yumnam Thakur, Chettri Bhanu, Kima Lalrin, Renthlei Zosiamliana, Patra Prasanta Kumar, Prasad Mattipally, Sivakumar Juluru, Laref Amel, Ghimire Madhav Prasad, Rai Dibya Prakash

机构信息

Department of Physics, North-Eastern Hill University, Shillong, Meghalaya793022, India.

Physical Sciences Research Center (PSRC), Department of Physics, Pachhunga University College, Mizoram University, Aizawl796001, India.

出版信息

ACS Omega. 2023 Feb 7;8(7):6895-6907. doi: 10.1021/acsomega.2c07637. eCollection 2023 Feb 21.

Abstract

Herein, we systematically studied the electronic, optical, and mechanical properties of a hydrogenated (6,0) single-walled carbon nanotube [(6,0) h-SWCNT] under applied uniaxial stress from first-principles density functional theory (DFT) and molecular dynamics (MD) simulation. We have applied the uniaxial stress range from -18 to 22 GPa on the (6,0) h-SWCNT (- sign indicates compressive and + indicates tensile stress) along the tube axes. Our system was found to be an indirect semiconductor (Γ-Δ), with a band gap value of ∼0.77 eV within the linear combination of atomic orbitals (LCAO) method using a GGA-1/2 exchange-correlation approximation. The band gap for (6,0) h-SWCNT significantly varies with the application of stress. The indirect to direct band gap transition was observed under compressive stress (-14 GPa). The strained (6,0) h-SWCNT showed a strong optical absorption in the infrared region. Application of external stress enhanced the optically active region from infrared to Vis with maximum intensity within the Vis-IR region, making it a promising candidate for optoelectronic devices. molecular dynamics (AIMD) simulation has been used to study the elastic properties of the (6,0) h-SWCNT which has a strong influence under applied stress.

摘要

在此,我们从第一性原理密度泛函理论(DFT)和分子动力学(MD)模拟出发,系统地研究了氢化(6,0)单壁碳纳米管[(6,0)h-SWCNT]在单轴应力作用下的电子、光学和力学性能。我们在(6,0)h-SWCNT上沿管轴施加了从-18到22 GPa的单轴应力范围(负号表示压缩应力,正号表示拉伸应力)。使用广义梯度近似(GGA-1/2)交换关联近似的原子轨道线性组合(LCAO)方法,我们发现该系统是一种间接半导体(Γ-Δ),带隙值约为0.77 eV。(6,0)h-SWCNT的带隙随应力的施加而显著变化。在压缩应力(-14 GPa)下观察到间接带隙到直接带隙的转变。应变的(6,0)h-SWCNT在红外区域表现出强烈的光吸收。外部应力的施加将光学活性区域从红外增强到可见光区域,在可见-红外区域具有最大强度,使其成为光电器件的有前途的候选材料。分子动力学(AIMD)模拟已用于研究(6,0)h-SWCNT的弹性性能,其在施加应力下有很大影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08ac/9948185/3fbcb39ebc5e/ao2c07637_0001.jpg

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