Zhang Guangqi, Lu Gaotian, Li Xuanzhang, Mei Zhen, Liang Liang, Fan Shoushan, Li Qunqing, Wei Yang
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China.
ACS Nano. 2023 Mar 14;17(5):4564-4573. doi: 10.1021/acsnano.2c10593. Epub 2023 Feb 27.
Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar semiconductors provide a prospective solution for the post-Moore era. It is still a challenge for ambipolar nanomaterials to realize reconfigurable polarity control and rectification with a simplified device structure. Here, an air-gap barristor based on an asymmetric stacking sequence of the electrode contacts was developed to resolve these issues. For the 2D ambipolar channel of WSe, the barristor can not only be reconfigured as an n- or p-type unipolar transistor but also work as a switchable diode. The air gap around the bottom electrode dominates the reconfigurable behaviors by widening the Schottky barrier here, thus blocking the injection of both electrons and holes. The electrical performances can be improved by optimizing the electrode materials, which achieve an on/off ratio of 10 for the transistor and a rectifying ratio of 10 for the diode. A complementary inverter and a switchable AND/OR logic gate were constructed by using the air-gap barristors as building blocks. This work provides an efficient approach with great potential for low-dimensional reconfigurable electronics.
由二维（2D）双极半导体实现的可重构逻辑电路为后摩尔时代提供了一种前瞻性的解决方案。对于双极纳米材料来说，以简化的器件结构实现可重构极性控制和整流仍然是一个挑战。在此，开发了一种基于电极接触不对称堆叠序列的气隙势垒电阻器来解决这些问题。对于WSe的二维双极通道，该势垒电阻器不仅可以重新配置为n型或p型单极晶体管，还可以用作可切换二极管。底部电极周围的气隙通过加宽此处的肖特基势垒来主导可重构行为，从而阻止电子和空穴的注入。通过优化电极材料可以提高电学性能，晶体管实现了10的开/关比，二极管实现了10的整流比。利用气隙势垒电阻器作为构建块构建了一个互补反相器和一个可切换与/或逻辑门。这项工作为低维可重构电子学提供了一种具有巨大潜力的有效方法。
