Hu Jinning, Chen Jun, Ma Teng, Li Zhenhua, Hu J, Ma T, Li Z
School of Science, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
Key Laboratory of Advanced Displaying Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
Nanotechnology. 2023 Mar 22;34(23). doi: 10.1088/1361-6528/acbf59.
Ultraviolet photodetectors (UV PDs) have always been the research focus of semiconductor optoelectronic devices due to their wide application fields and diverse compositions. As one of the best-known n-type metal oxides in third-generation semiconductor electronic devices, ZnO nanostructures and their assembly with other materials have received extensive research. In this paper, the research progress of different types of ZnO UV PDs is reviewed, and the effects of different nanostructures on ZnO UV PDs are summarized in detail. In addition, physical effects such as piezoelectric photoelectric effect, pyroelectric effect, and three ways of heterojunction, noble metal local surface plasmon resonance enhancement and formation of ternary metal oxides on the performance of ZnO UV PDs were also investigated. The applications of these PDs in UV sensing, wearable devices, and optical communication are displayed. Finally, the possible opportunities and challenges for the future development of ZnO UV PDs are prospected.
紫外光电探测器（UV PDs）由于其广泛的应用领域和多样的组成成分，一直是半导体光电器件的研究重点。作为第三代半导体电子器件中最著名的n型金属氧化物之一，ZnO纳米结构及其与其他材料的组装受到了广泛研究。本文综述了不同类型ZnO紫外光电探测器的研究进展，并详细总结了不同纳米结构对ZnO紫外光电探测器的影响。此外，还研究了诸如压光电效应、热释电效应等物理效应，以及异质结、贵金属局部表面等离子体共振增强和三元金属氧化物形成这三种方式对ZnO紫外光电探测器性能的影响。展示了这些探测器在紫外传感、可穿戴设备和光通信中的应用。最后，展望了ZnO紫外光电探测器未来发展可能面临的机遇和挑战。
