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通过逐步优化策略实现高性能工业级 p 型(Bi,Sb)Te 热电

High-Performance Industrial-Grade p-Type (Bi,Sb) Te Thermoelectric Enabled by a Stepwise Optimization Strategy.

机构信息

Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.

University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

出版信息

Adv Mater. 2023 May;35(21):e2300338. doi: 10.1002/adma.202300338. Epub 2023 Mar 31.

Abstract

As the sole dominator of the commercial thermoelectric (TE) market, Bi Te -based alloys play an irreplaceable role in Peltier cooling and low-grade waste heat recovery. Herein, to improve the relative low TE efficiency determined by the figure of merit ZT, an effective approach is reported for improving the TE performance of p-type (Bi,Sb) Te by incorporating Ag GeTe and Se. Specifically, the diffused Ag and Ge atoms into the matrix conduce to optimized carrier concentration and enlarge the density-of-states effective mass while the Sb-rich nanoprecipitates generate coherent interfaces with little loss of carrier mobility. The subsequent Se dopants introduce multiple phonon scattering sources and significantly suppress the lattice thermal conductivity while maintaining a decent power factor. Consequently, a high peak ZT of 1.53 at 350 K and a remarkable average ZT of 1.31 (300-500 K) are attained in the Bi Sb Te Se  + 0.10 wt% Ag GeTe sample. Most noteworthily, the size and mass of the optimal sample are enlarged to Ø40 mm-200 g and the constructed 17-couple TE module exhibits an extraordinary conversion efficiency of 6.3% at ΔT = 245 K. This work demonstrates a facile method to develop high-performance and industrial-grade (Bi,Sb) Te -based alloys, which paves a strong way for further practical applications.

摘要

作为商业热电 (TE) 市场的唯一主导者,碲化铋 (BiTe) 基合金在珀耳帖冷却和低品位余热回收方面发挥着不可替代的作用。在此,为了提高由品质因数 ZT 决定的相对低 TE 效率,报道了一种通过掺入 AgGeTe 和 Se 来提高 p 型 (Bi,Sb)Te 的 TE 性能的有效方法。具体来说,扩散到基体中的 Ag 和 Ge 原子导致载流子浓度优化并增大了态密度有效质量,而富 Sb 的纳米沉淀物与载流子迁移率几乎没有损失的产生相干界面。随后的 Se 掺杂剂引入了多个声子散射源,并显著抑制了晶格热导率,同时保持了相当的功率因子。因此,在 BiSbTeSe + 0.10wt%AgGeTe 样品中获得了 350 K 时高达 1.53 的高峰值 ZT 和 300-500 K 时显著的平均 ZT 值 1.31。最值得注意的是,最佳样品的尺寸和质量增大到 Ø40mm-200g,并且构建的 17 对 TE 模块在 ΔT = 245 K 时表现出非凡的转换效率 6.3%。这项工作展示了一种开发高性能和工业级 (Bi,Sb)Te 基合金的简便方法,为进一步的实际应用铺平了道路。

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