Chu R J, Kim Y, Woo S W, Choi W J, Jung D
Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
Division of Nanoscience and Technology, University of Science and Technology, Seoul, 02792, South Korea.
Discov Nano. 2023 Mar 6;18(1):31. doi: 10.1186/s11671-023-03810-y.
InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this study, we explore the effect of punctuated growth (PG) on the structure and optical properties of InP-based InAs Qdashes emitting near the 2-μm wavelength. Morphological analysis revealed that PG led to an improvement in in-plane size uniformity and increases in average height and height distribution. A 2 × boost in photoluminescence intensity was observed, which we attribute to improved lateral dimensions and structural stabilization. PG encouraged formation of taller Qdashes while photoluminescence measurements revealed a blue-shift in the peak wavelength. We proposed that the blue-shift originates from the thinner quantum well cap and decreased distance between the Qdash and InAlGaAs barrier. This study on the punctuated growth of large InAs Qdashes is a step toward realizing bright, tunable, and broadband sources for 2-μm communications, spectroscopy, and sensing.
设计用于发射近2μm波长光的砷化铟量子点（Qdash）被认为是下一代传感和通信技术中很有前景的量子发射器。在本研究中，我们探究了间断生长（PG）对发射波长接近2μm的基于磷化铟的砷化铟Qdash的结构和光学性质的影响。形态分析表明，PG导致了面内尺寸均匀性的改善以及平均高度和高度分布的增加。观察到光致发光强度提高了2倍，我们将其归因于横向尺寸的改善和结构稳定性。PG促进了更高Qdash的形成，而光致发光测量显示峰值波长发生了蓝移。我们提出，蓝移源于量子阱盖层变薄以及Qdash与铟铝镓砷势垒之间的距离减小。这项关于大型砷化铟Qdash间断生长的研究是朝着实现用于2μm通信、光谱学和传感的明亮、可调谐和宽带光源迈出的一步。
