Wan Yating, Shang Chen, Huang Jian, Xie Zhiyang, Jain Aditya, Norman Justin, Chen Baile, Gossard Arthur C, Bowers John E
Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, United States.
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, United States.
ACS Nano. 2020 Mar 24;14(3):3519-3527. doi: 10.1021/acsnano.9b09715. Epub 2020 Feb 25.
Photodiodes and integrated optical receivers operating at 1.55 micrometer (μm) wavelength are crucial for long-haul communication and data transfer systems. In this paper, we report C-band InAs quantum dash (Qdash) waveguide photodiodes (PDs) with a record-low dark current of 5 pA, a responsivity of 0.26 A/W at 1.55 μm, and open eye diagrams up to 10 Gb/s. These Qdash-based PDs leverage the same epitaxial layers and processing steps as Qdash lasers and can thus be integrated with laser sources for power monitors or amplifiers for preamplified receivers, manifesting themselves as a promising alternative to their InGaAs and Ge counterparts in low-power optical communication links.
工作在1.55微米（μm）波长的光电二极管和集成光接收器对于长距离通信和数据传输系统至关重要。在本文中，我们报道了C波段基于砷化铟量子点（Qdash）波导的光电二极管（PDs），其暗电流低至5 pA，在1.55 μm波长处的响应度为0.26 A/W，并且能实现高达10 Gb/s的清晰眼图。这些基于Qdash的光电二极管利用了与Qdash激光器相同的外延层和处理步骤，因此可以与激光源集成用于功率监测器，或与放大器集成用于前置放大接收器，在低功率光通信链路中，它们是其铟镓砷和锗同类产品很有前景的替代方案。
