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消除 FLURZnrc 衍生电子注量谱中接近 Spencer-Attix-Nahum 截止值的伪影。

The elimination of an artifact in the FLURZnrc-derived electron-fluence spectrum close to the Spencer-Attix-Nahum cut-off.

机构信息

Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, CT & CRS building, Anushaktinagar, Mumbai-400094, India.

12 Beech House, Ancastle Green, Henley-on-Thames RG9 1UL, United Kingdom.

出版信息

Phys Med Biol. 2023 Apr 20;68(9). doi: 10.1088/1361-6560/acc30c.

Abstract

. An artifact in the electron fluence, differential in energy,, computed by the EGSnrc Monte-Carlo user-code FLURZnrc, was identified and a methodology has been developed to eliminate it. This artifact manifests itself as an 'unphysical' increase inat energies close to the production threshold for knock-on electrons,; this in turn causes an over-estimation of the Spencer-Attix-Nahum (SAN) 'track-end' dose by a factor ∼1.5, thereby inflating the dose derived from the SAN cavity integral. For SAN cut-off1 keV for 1 MeV and 10 MeV photons in water, aluminium and copper, with= 0.25 (default value), this anomalous increase in the SAN cavity-integral dose is of the order of 0.5%-0.7%.. The dependence ofon the value of(the maximum energy loss involved in the restricted electronic stopping power (d/d)) at or close towas investigated; this was done for different values of.The error in the electron-fluence spectrum occurs whenis setor; this error disappears (at the 0.1% level or better) ifis set ≤ 0.5 ×. However, if≤ 0.04 the error in the electron-fluence spectrum is negligible even when=.. An artifact in the FLURZnrc-derived electron fluence, differential in energy, at or close to electron energyhas been identified. It is shown how this artifact can be avoided, thereby ensuring the accurate evaluation of the SAN cavity integral.

摘要

在电子注量、微分能量中出现了一种人为产物,由 EGSnrc 蒙特卡罗用户代码 FLURZnrc 计算得到,我们已经开发出一种方法来消除它。这种人为产物表现为在接近韧致辐射电子产生阈能附近的“非物理”增加;这反过来又导致 Spencer-Attix-Nahum(SAN)“轨迹末端”剂量的高估约 1.5 倍,从而使从 SAN 腔积分得出的剂量膨胀。对于在水中、铝和铜中的 1 MeV 和 10 MeV 光子,当 SAN 截止值为 1 keV 时,= 0.25(默认值),这种 SAN 腔积分剂量的异常增加约为 0.5%-0.7%。研究了对或接近电子的限制电子阻止本领(d/d)的最大能量损失值()的依赖性;这是为不同的值进行的。当设置为或时,电子注量谱的误差就会出现;如果设置为≤ 0.5 ×,则该误差(在 0.1%或更好的水平)就会消失。然而,如果≤ 0.04,即使=,电子注量谱的误差也可以忽略不计。在 FLURZnrc 导出的电子注量微分能量中,在电子能量或接近电子能量处出现了一种人为产物。本文展示了如何避免这种人为产物,从而确保 SAN 腔积分的准确评估。

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