Huang Zhaorong, Zhang Qi, Corkovic Silvana, Dorey Robert, Whatmore Roger W
Department of Materials, Cranfield University, Bedfordshire, MK43 OAL, UK.
IEEE Trans Ultrason Ferroelectr Freq Control. 2006 Dec;53(12):2287-93. doi: 10.1109/tuffc.2006.175.
Chemical solution deposition (CSD) techniques were used to prepare lead zirconate (Zr) titanate (Ti) (PZT) thin films with Zr/Ti ratios of 30/70 and 52/48. Usually CSD processing is restricted to making crack-free, single-layer films of 70-nm thick, but modifications to the sol-gel process have permitted the fabrication of dense, crack-free, single layers up to 200 to 300 nm thick, which can be built-up into layers up to 3-microm thick. Thicker PZT films (> 2-microm single layer) can be produced by using a composite sol-gel/ceramic process. Knowledge of the electroactive properties of these materials is essential for modeling and design of novel micro-electromechanical systems (MEMS) devices, but accurate measurement of these properties is by no means straightforward. A novel, double-beam, common-path laser interferometer has been developed to measure the longitudinal (d33) piezoelectric coefficient in films; the results were compared with the values obtained by Berlin-court and laser scanning vibrometer methods. It was found that, for thin-film samples, the d(33,f) values obtained from the Berlincourt method are usually larger: than those obtained from the interferometer and the vibrometer methods; the reasons for this are discussed.
采用化学溶液沉积（CSD）技术制备了锆（Zr）钛（Ti）酸铅（PZT）薄膜，其Zr/Ti比分别为30/70和52/48。通常，CSD工艺仅限于制备厚度为70纳米的无裂纹单层薄膜，但对溶胶 - 凝胶工艺的改进使得能够制造出致密、无裂纹、厚度达200至300纳米的单层薄膜，这些薄膜可以堆叠成厚度达3微米的多层薄膜。通过使用复合溶胶 - 凝胶/陶瓷工艺可以制备更厚的PZT薄膜（单层厚度>2微米）。了解这些材料的电活性特性对于新型微机电系统（MEMS）器件的建模和设计至关重要，但准确测量这些特性绝非易事。已开发出一种新型双光束共光路激光干涉仪来测量薄膜中的纵向（d33）压电系数；将结果与通过柏林方法和激光扫描振动计方法获得的值进行了比较。结果发现，对于薄膜样品，通过柏林方法获得的d(33,f)值通常大于通过干涉仪和振动计方法获得的值；对此原因进行了讨论。
