Gil-Corrales John A, Morales Alvaro L, Duque Carlos A
Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín 50011, Colombia.
Nanomaterials (Basel). 2023 Mar 1;13(5):913. doi: 10.3390/nano13050913.
In this work, the characterization and analysis of the physics of a GaAs quantum well with AlGaAs barriers were carried out, according to an interior doped layer. An analysis of the probability density, the energy spectrum, and the electronic density was performed using the self-consistent method to solve the Schrödinger, Poisson, and charge-neutrality equations. Based on the characterizations, the system response to geometric changes in the well width and to non-geometric changes, such as the position and with of the doped layer as well as the donor density, were reviewed. All second-order differential equations were solved using the finite difference method. Finally, with the obtained wave functions and energies, the optical absorption coefficient and the electromagnetically induced transparency between the first three confined states were calculated. The results showed the possibility of tuning the optical absorption coefficient and the electromagnetically induced transparency via changes to the system geometry and the doped-layer characteristics.
在这项工作中，根据一个内部掺杂层，对具有AlGaAs势垒的GaAs量子阱的物理特性进行了表征和分析。使用自洽方法求解薛定谔方程、泊松方程和电荷中性方程，对概率密度、能谱和电子密度进行了分析。基于这些表征，研究了该系统对阱宽度的几何变化以及对非几何变化（如掺杂层的位置和宽度以及施主密度）的响应。所有二阶微分方程均采用有限差分法求解。最后，利用所得到的波函数和能量，计算了前三个受限态之间的光吸收系数和电磁诱导透明性。结果表明，可以通过改变系统几何结构和掺杂层特性来调节光吸收系数和电磁诱导透明性。
