半导体量子阱与纳米结构
Semiconductor Quantum Wells and Nanostructures.
作者信息
Kvon Ze Don
机构信息
Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia.
Department of Physics, Novosibirsk State University, 630090 Novosibirsk, Russia.
出版信息
Nanomaterials (Basel). 2023 Jun 24;13(13):1924. doi: 10.3390/nano13131924.
Abstract
Semiconductor quantum wells and nanostructures have been the main quantum and classical physical objects in condensed matter physics for over half a century, since the discovery of the two-dimensional electron gas in silicon MOSFETs and size quantization in thin bismuth films [...].
摘要
自硅金属氧化物半导体场效应晶体管（MOSFET）中二维电子气的发现以及铋薄膜中的尺寸量子化以来，半个多世纪以来，半导体量子阱和纳米结构一直是凝聚态物理中的主要量子和经典物理对象[……]
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