Laboratoire Bio-Géosciences et Ingénierie des Matériaux, Ecole Normale Supérieure, Université Hassan II de Casablanca, Casablanca, Morocco.
Centre Régional des Métiers de l'Education et de la Formation Casablanca-Settat, Casablanca, Morocco.
Environ Sci Pollut Res Int. 2024 Nov;31(53):61999-62009. doi: 10.1007/s11356-023-26352-3. Epub 2023 Mar 11.
In order to develop materials able to guarantee optimal characteristics in terms of environmental compatibility, abundance, and photoactivity, zinc telluride (ZnTe) has become a great candidate for optoelectronic and photovoltaic device applications. In this work, on the basis of electrochemical techniques including cyclic voltammetry and chronoamperometry, it was found that the electrodeposition of zinc telluride (ZnTe) on indium tin oxide substrate (ITO) is a quasi-reversible reaction controlled by the diffusion process. The nucleation and growth mechanism follows the instantaneous three-dimensional process according to Scharifker and Hill model. The crystallographic structure and film morphology were studied by XRD and SEM analyses, respectively. ZnTe films have a cubic crystal structure, and they are characterized by good homogeneity. The optical measurements of the deposited films were performed, and a direct energy gap of 2.39 eV was determined by UV-visible spectroscopy.
为了开发出在环境相容性、丰富度和光活性方面能保证最佳特性的材料，碲化锌 (ZnTe) 已成为光电和光伏器件应用的理想候选材料。在这项工作中，基于包括循环伏安法和计时电流法在内的电化学技术，发现碲化锌 (ZnTe) 在氧化铟锡基底 (ITO) 上的电沉积是一个由扩散过程控制的准可逆反应。成核和生长机制根据 Scharifker 和 Hill 模型遵循瞬时三维过程。通过 XRD 和 SEM 分析分别研究了晶体结构和薄膜形貌。ZnTe 薄膜具有立方晶体结构，且具有良好的均一性。对沉积薄膜进行了光学测量，通过紫外可见光谱确定了 2.39 eV 的直接能隙。
