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用于太阳能电池应用的在FTO衬底上电沉积CuNiSnS吸收层。

Electrodeposition of CuNiSnS absorber layer on FTO substrate for solar cell applications.

作者信息

Ait Layachi Omar, Hrir Hala, Boudouma Abderrazzak, Atourki Lahoucine, Azmi Sara, Fariat Yousra, Nini Meryem, Moujib Asmaa, Khoumri El Mati

机构信息

Laboratory of Physical Chemistry and Biotechnology of Biomolecules and Materials, Faculty of Sciences and Technology, Hassan II University of Casablanca Mohammedia 20650 Morocco

MANAPSE Lab, Faculty of Sciences, Mohammed V University in Rabat Morocco.

出版信息

RSC Adv. 2024 Sep 18;14(40):29439-29454. doi: 10.1039/d4ra04249b. eCollection 2024 Sep 12.

DOI:10.1039/d4ra04249b
PMID:39297033
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11409721/
Abstract

Potentiostatic and electrochemical impedance spectroscopy (EIS) measurements were recorded to study the nucleation and growth mechanisms of electrodeposited CuNiSnS (CNTS) thin films from aqueous solution at different applied potentials. The electrodeposition process of Cu-Ni-Sn-S precursors were studied using cyclic voltammetry and chronoamperometry techniques. The nucleation and growth mechanism of these films was found to follow a three-dimensional progressive nucleation limited by diffusion-controlled growth. The nucleation mechanism is found to be influenced by the presence of SO , which prompts the electrodeposition of S. electrochemical impedance spectroscopy (EIS) investigates the electrodeposition behavior of CNTS precursors on the surface electrode. A capacitive behavior was observed at high frequencies, while the presence of Warburg diffusion was detected only for potentials less negative than -1.0 V Ag/AgCl. The crystallographic structure, morphology, composition, and optical band gap of CNTS thin films was examined using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV-visible spectroscopy. Electrodeposition at -0.98 V Ag/AgCl resulted in the formation of microsheets with a uniform morphology and homogeneous thickness of sulfurized CNTS film. This potential also proved to be optimal for achieving higher crystallinity, a pure phase, and a suitable band gap energy of approximately 1.6 eV.

摘要

记录了恒电位和电化学阻抗谱（EIS）测量结果，以研究在不同施加电位下从水溶液中电沉积CuNiSnS（CNTS）薄膜的成核和生长机制。使用循环伏安法和计时电流法技术研究了Cu-Ni-Sn-S前驱体的电沉积过程。发现这些薄膜的成核和生长机制遵循受扩散控制生长限制的三维渐进成核。发现成核机制受SO的存在影响，SO促使S的电沉积。电化学阻抗谱（EIS）研究了CNTS前驱体在表面电极上的电沉积行为。在高频下观察到电容性行为，而仅在电位比 -1.0 V Ag/AgCl更正时才检测到Warburg扩散的存在。使用X射线衍射、拉曼光谱、扫描电子显微镜和紫外可见光谱检查了CNTS薄膜的晶体结构、形态、组成和光学带隙。在 -0.98 V Ag/AgCl下进行电沉积导致形成具有均匀形态和硫化CNTS薄膜均匀厚度的微片。该电位也被证明是实现更高结晶度、纯相和合适带隙能量（约1.6 eV）的最佳电位。

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本文引用的文献

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Colloidal synthesis of wurtzite Cu₂CoSnS₄ nanocrystals and the photoresponse of spray-deposited thin films.
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