Suppr超能文献

一维石墨材料的可调和生长:石墨烯纳米带、碳纳米管和纳米带/纳米管结。

Tunable growth of one-dimensional graphitic materials: graphene nanoribbons, carbon nanotubes, and nanoribbon/nanotube junctions.

机构信息

Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China.

Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.

出版信息

Sci Rep. 2023 Mar 15;13(1):4328. doi: 10.1038/s41598-023-31573-0.

Abstract

Graphene nanoribbons (GNRs) and carbon nanotubes (CNTs), two representative one-dimensional (1D) graphitic materials, have attracted tremendous research interests due to their promising applications for future high-performance nanoelectronics. Although various methods have been developed for fabrication of GNRs or CNTs, a unified method allowing controllable synthesis of both of them, as well as their heterojunctions, which could largely benefit their nano-electronic applications, is still lacking. Here, we report on a generic growth of 1D carbon using nanoparticles catalyzed chemical vapor deposition (CVD) on atomically flat hexagonal boron nitride (h-BN) substrates. Relative ratio of the yielded GNRs and CNTs is able to be arbitrarily tuned by varying the growth temperature or feeding gas pressures. The tunability of the generic growth is quantitatively explained by a competing nucleation theory: nucleation into either GNRs or CNTs by the catalysts is determined by the free energy of their formation, which is controlled by the growth conditions. Under the guidance of the theory, we further realized growth of GNR/CNT intramolecular junctions through changing H partial pressure during a single growth process. Our study provides not only a universal and controllable method for growing 1D carbon nanostructures, but also a deep understanding of their growth mechanism, which would largely benefit future carbon-based electronics and optoelectronics.

摘要

石墨烯纳米带(GNRs)和碳纳米管(CNTs)是两种具有代表性的一维(1D)石墨材料,由于它们在未来高性能纳米电子学中的应用前景广阔,因此引起了极大的研究兴趣。尽管已经开发出了各种用于制造 GNRs 或 CNTs 的方法,但仍缺乏一种通用的方法来可控合成它们以及它们的异质结,这将大大有利于它们的纳米电子应用。在这里,我们报告了一种使用原子级平坦的六方氮化硼(h-BN)衬底上的纳米颗粒催化化学气相沉积(CVD)来通用生长一维碳的方法。通过改变生长温度或进料气体压力,可以任意调节所生成的 GNRs 和 CNTs 的相对比例。通过竞争成核理论可以定量解释通用生长的可调节性:催化剂成核为 GNRs 或 CNTs取决于它们形成的自由能,而这又受生长条件的控制。在该理论的指导下,我们通过在单个生长过程中改变 H 分压,进一步实现了 GNR/CNT 分子内结的生长。我们的研究不仅提供了一种通用且可控的一维碳纳米结构生长方法,而且深入了解了它们的生长机制,这将大大有利于未来的碳基电子学和光电子学。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3fc3/10017793/a1c02f4bb660/41598_2023_31573_Fig1_HTML.jpg

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验