Sagade Abhay A, Nyayadhish Ameya
Laboratory for Advanced Nanoelectronic Devices, Department of Physics & Nanotechnology, SRM Institute of Science and Technology Sir C. V. Raman Research Park Kattankulathur 603 203 India
Nanoscale Adv. 2020 Jan 30;2(2):659-663. doi: 10.1039/c9na00797k. eCollection 2020 Feb 18.
The nature and type of intramolecular junctions are very important for nanoelectronics. Here, a new way of fabricating seamless junctions between carbon nanotubes and graphene nanoribbons (GNRs) is demonstrated. Dielectrophoretically aligned multi-walled carbon nanotubes (CNTs) across metal electrodes are etched with an Ar ion beam at low pressure. We show that grounding of metal electrodes plays an important role in the etching of CNTs in contact with the metal electrodes. If electrodes are grounded, that portion of the CNT doesn't get etched due to the discharge of ions through the ground, and CNT to GNR conversion occurs in the gap region between the metal electrodes. Thus produced GNRs have a large aspect ratio of ∼90, and Raman spectroscopy analysis shows that the distance between the defects is ∼65 nm. The CNT-GNR-CNT seamless junctions are ohmic in nature and the transistor shows a current on/off ratio of 27 with a hole mobility of 350 cm V s.
分子内连接的性质和类型对纳米电子学非常重要。在此，展示了一种在碳纳米管和石墨烯纳米带（GNRs）之间制造无缝连接的新方法。通过介电泳使跨金属电极排列的多壁碳纳米管（CNTs）在低压下用氩离子束蚀刻。我们表明金属电极接地在与金属电极接触的碳纳米管蚀刻中起重要作用。如果电极接地，由于离子通过接地放电，碳纳米管的该部分不会被蚀刻，并且在金属电极之间的间隙区域会发生碳纳米管到石墨烯纳米带的转变。如此产生的石墨烯纳米带具有约90的大纵横比，拉曼光谱分析表明缺陷之间的距离约为65纳米。碳纳米管 - 石墨烯纳米带 - 碳纳米管无缝连接本质上是欧姆性的，并且该晶体管显示出27的电流开/关比以及350 cm² V⁻¹ s⁻¹的空穴迁移率。
